Inventor
SHEU SHING-REN
TW21 patents
Patents
21 patentsUS6455943B1Sep 24, 2002
Bonding pad structure of semiconductor device having improved bondability
UNITED MICROELECTRONICS CORP51 citations95
US7859285B2Dec 28, 2010
Device under test array for identifying defects
UNITED MICROELECTRONICS CORP22 citations92
US6417548B1Jul 9, 2002
Variable work function transistor high density mask ROM
UNITED MICROELECTRONICS CORP26 citations92
US6054353AApr 25, 2000
Short turn around time mask ROM process
UNITED MICROELECTRONICS CORP27 citations92
US5691234ANov 25, 1997
Buried contact method to release plasma-induced charging damage on device
UNITED MICROELECTRONICS CORP23 citations92
US5576573ANov 19, 1996
Stacked CVD oxide architecture multi-state memory cell for mask read-only memories
UNITED MICROELECTRONICS CORP36 citations92
US5571737ANov 5, 1996
Metal oxide semiconductor device integral with an electro-static discharge circuit
UNITED MICROELECTRONICS CORP22 citations92
US5429975AJul 4, 1995
Method of implanting during manufacture of ROM device
UNITED MICROELECTRONICS CORP25 citations92
US5382534AJan 17, 1995
Field effect transistor with recessed buried source and drain regions
UNITED MICROELECTRONICS CORP28 citations92
US7026234B2Apr 11, 2006
Parasitic capacitance-preventing dummy solder bump structure and method of making the same
UNITED MICROELECTRONICS CORP14 citations83
US6093626AJul 25, 2000
Buried contact method to release plasma-included charging damage on device
UNITED MICROELECTRONICS CORP14 citations74
US5597753AJan 28, 1997
CVD oxide coding method for ultra-high density mask read-only-memory (ROM)
UNITED MICROELECTRONICS CORP17 citations74
US6350654B1Feb 26, 2002
Semiconductor read-only memory device and method of fabricating the same
UNITED MICROELECTRONICS CORP6 citations73
US5942786AAug 24, 1999
Variable work function transistor high density mask ROM
UNITED MICROELECTRONICS CORP9 citations73
US5488009AJan 30, 1996
Post-titanium nitride mask ROM programming method
UNITED MICROELECTRONICS CORP6 citations71
US6146950ANov 14, 2000
Method of manufacturing multiple metallic layered embedded ROM
UNITED MICROELECTRONICS CORP11 citations68
US5998832ADec 7, 1999
Metal oxide semiconductor device for an electro-static discharge circuit
UNITED MICROELECTRONICS CORP5 citations63
US5654576AAug 5, 1997
Post-titanium nitride mask ROM programming method and device manufactured thereby
UNITED MICROELECTRONICS CORP4 citations63
US5589411ADec 31, 1996
Process for fabricating a high-voltage MOSFET
UNITED MICROELECTRONICS CORP3 citations63
US5567970AOct 22, 1996
Post metal mask ROM with thin glass dielectric layer formed over word lines
UNITED MICROELECTRONICS CORP5 citations63
US6380587B1Apr 30, 2002
Semiconductor read-only memory device and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations52