Inventor
CHO SOO-IN
KR25 patents
⚠️ This page may combine multiple inventors who share the name “CHO SOO-IN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS5933379AAug 3, 1999
Method and circuit for testing a semiconductor memory device operating at high frequency
SAMSUNG ELECTRONICS CO LTD79 citations96
US5748543AMay 5, 1998
Self repairing integrated circuit memory devices and methods
SAMSUNG ELECTRONICS CO LTD79 citations96
US5446697AAug 29, 1995
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD52 citations96
US5343438AAug 30, 1994
Semiconductor memory device having a plurality of row address strobe signals
SAMSUNG ELECTRONICS CO LTD78 citations95
US5097441AMar 17, 1992
Interdigitated and twisted word line structure for semiconductor memories
SAMSUNG ELECTRONICS CO LTD62 citations94
US6266286B1Jul 24, 2001
Wafer burn-in test circuit and method for testing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations92
US6026038AFeb 15, 2000
Wafer burn-in test circuit and method for testing a semiconductor memory
SAMSUNG ELECTRONICS CO LTD18 citations92
US5889719AMar 30, 1999
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD37 citations92
US5659519AAug 19, 1997
Boosting voltage generator of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD40 citations92
US5130580AJul 14, 1992
Sense amplifier driving circuit employing current mirror for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD34 citations92
US4920280AApr 24, 1990
Back bias generator
SAMSUNG ELECTRONICS CO LTD32 citations92
US6075384AJun 13, 2000
Current-mode bidirectional input/output buffer
SAMSUNG ELECTRONICS CO LTD25 citations91
US5726939AMar 10, 1998
Semiconductor memory device having fast writing circuit for test thereof
SAMSUNG ELECTRONICS CO LTD17 citations84
US5610869AMar 11, 1997
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD17 citations82
US5140553AAug 18, 1992
Flash writing circuit for writing test data in dynamic random access memory (dram) devices
SAMSUNG ELECTRONICS CO LTD16 citations74
US9865059B2Jan 9, 2018
Medical image processing method and apparatus for determining plane of interest
SAMSUNG ELECTRONICS CO LTD2 citations73
US5946242AAug 31, 1999
Internal source voltage generator for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations73
US5790465AAug 4, 1998
Wafer burn-in test circuit and a method thereof
SAMSUNG ELECTRONICS CO LTD15 citations73
US6094376AJul 25, 2000
Data output buffer control circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations71
US5629894AMay 13, 1997
Memory module having read-modify-write function
SAMSUNG ELECTRONICS CO LTD5 citations63
US6983010B1Jan 3, 2006
High frequency equalizer using a demultiplexing technique and related semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations61
US5214600AMay 25, 1993
Semiconductor memory array having interdigitated bit-line structure
SAMSUNG ELECTRONICS CO LTD5 citations61
US7483320B2Jan 27, 2009
Data input/output method of semiconductor memory device and semiconductor memory device for the same
SAMSUNG ELECTRONICS CO LTD0 citations41