Inventor
CHIN DAE-JE
KR22 patents
Patents
22 patentsUS6670950B1Dec 30, 2003
Portable computer and method using an auxilliary LCD panel having a touch screen as a pointing device
SAMSUNG ELECTRONICS CO LTD230 citations98
US6404534B1Jun 11, 2002
Micro-mirror device and driving method
SAMSUNG ELECTRONICS CO LTD62 citations96
US5446697AAug 29, 1995
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD52 citations96
US5432365AJul 11, 1995
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD57 citations96
US5343438AAug 30, 1994
Semiconductor memory device having a plurality of row address strobe signals
SAMSUNG ELECTRONICS CO LTD78 citations95
US7224409B2May 29, 2007
Channel tuning method and television using channel name auto completion function
SAMSUNG ELECTRONICS CO LTD44 citations92
US5889719AMar 30, 1999
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD37 citations92
US5283760AFeb 1, 1994
Data transmission circuit
SAMSUNG ELECTRONICS CO LTD20 citations92
US5130580AJul 14, 1992
Sense amplifier driving circuit employing current mirror for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD34 citations92
US6439724B1Aug 27, 2002
Color projector
SAMSUNG ELECTRONICS CO LTD22 citations91
US5430602AJul 4, 1995
Input protection circuit for protecting an internal circuit of a semiconductor device from electrostatic discharge
SAMSUNG ELECTRONICS CO LTD22 citations91
US5146152ASep 8, 1992
Circuit for generating internal supply voltage
SAMSUNG ELECTRONICS CO LTD54 citations91
US5359560AOct 25, 1994
Semiconductor memory device having improved redundancy efficiency
SAMSUNG ELECTRONICS CO LTD44 citations89
US6354707B1Mar 12, 2002
Liquid crystal display projection system
SAMSUNG ELECTRONICS CO LTD17 citations83
US5610869AMar 11, 1997
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD17 citations82
US5378908AJan 3, 1995
Stack capacitor DRAM cell having increased capacitor area
SAMSUNG ELECTRONICS CO LTD15 citations82
US5120674AJun 9, 1992
Method of making stacked capacitor dram cell
SAMSUNG ELECTRONICS CO LTD19 citations82
US5543649AAug 6, 1996
Electrostatic discharge protection device for a semiconductor circuit
SAMSUNG ELECTRONICS CO LTD10 citations74
US5320976AJun 14, 1994
Method for manufacturing VLSI semiconductor device
SAMSUNG ELECTRONICS CO LTD17 citations74
US4948993AAug 14, 1990
Distributed sensing control circuit for a sense amplifier of the memory device
SAMSUNG ELECTRONICS CO LTD18 citations74
USRE36261EAug 3, 1999
Stack capacitor DRAM cell having increased capacitor area
SAMSUNG ELECTRONICS CO LTD2 citations63
US5760791AJun 2, 1998
Graphic RAM having a dual port and a serial data access method thereof
SAMSUNG ELECTRONICS CO LTD5 citations62