Inventor
KIM MYONG-JAE
KR21 patents
Patents
21 patentsUS6266282B1Jul 24, 2001
Write method of synchronous flash memory device sharing a system bus with a synchronous random access memory device
SAMSUNG ELECTRONICS CO LTD66 citations94
US6614292B1Sep 2, 2003
Boosting circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD34 citations92
US5519347AMay 21, 1996
Start-up circuit for stable power-on of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD28 citations92
US7236423B2Jun 26, 2007
Low power multi-chip semiconductor memory device and chip enable method thereof
SAMSUNG ELECTRONICS CO LTD16 citations91
US5283764AFeb 1, 1994
Refresh timer for providing a constant refresh timer regardless of variations in the operating voltage
SAMSUNG ELECTRONICS CO LTD44 citations91
US6762959B2Jul 13, 2004
Low-power nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7864622B2Jan 4, 2011
Low power multi-chip semiconductor memory device and chip enable method thereof
SAMSUNG ELECTRONICS CO LTD9 citations82
US9786336B2Oct 10, 2017
Memory device capable of operation in wide temperature range and data processing system and method of operating the same
SAMSUNG ELECTRONICS CO LTD11 citations81
US9230610B2Jan 5, 2016
Semiconductor memory device for use in multi-chip package
SAMSUNG ELECTRONICS CO LTD10 citations81
US7417896B2Aug 26, 2008
Flash memory device capable of reduced programming time
SAMSUNG ELECTRONICS CO LTD7 citations74
US5771192AJun 23, 1998
Bit line reference circuit for a nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD14 citations74
US6625063B2Sep 23, 2003
Nonvolatile semiconductor memory device and programming method therefor
SAMSUNG ELECTRONICS CO LTD8 citations73
US6452847B2Sep 17, 2002
Testable nonvolatile semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations73
US7492642B2Feb 17, 2009
Flash memory device capable of reduced programming time
SAMSUNG ELECTRONICS CO LTD4 citations63
US7274598B2Sep 25, 2007
Nonvolatile integrated circuit memory devices having staged application of program voltages and methods for programming the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7245547B2Jul 17, 2007
Power detector for use in a nonvolatile memory device and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US7085169B2Aug 1, 2006
Flash memory device capable of reducing read time
SAMSUNG ELECTRONICS CO LTD5 citations62
US7379380B2May 27, 2008
Low power multi-chip semiconductor memory device and chip enable method thereof
SAMSUNG ELECTRONICS CO LTD4 citations61
US7286411B2Oct 23, 2007
Row decoder circuit for use in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US5324970AJun 28, 1994
Interconnection structure in semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US7248505B2Jul 24, 2007
Flash memory device
SAMSUNG ELECTRONICS CO LTD0 citations51