Inventor
ITO SHINYA
JP103 patents
⚠️ This page may combine multiple inventors who share the name “ITO SHINYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI HIGH TECH CORP
12 patentsUS6942793B2Sep 13, 2005
Liquid chromatograph mass spectrometer
HITACHI HIGH TECH CORP30 citations93
US8048312B2Nov 1, 2011
Separation analyzer
HITACHI HIGH TECH CORP9 citations84
US7141161B2Nov 28, 2006
Gradient pump apparatus
HITACHI HIGH TECH CORP11 citations84
US7699990B2Apr 20, 2010
Separation analyzer
HITACHI HIGH TECH CORP7 citations74
US7135111B2Nov 14, 2006
Separation analyzer
HITACHI HIGH TECH CORP10 citations74
US11859600B2Jan 2, 2024
Liquid feed pump and liquid chromatography device
HITACHI HIGH TECH CORP4 citations72
US9885732B2Feb 6, 2018
Analysis device and analysis method
HITACHI HIGH TECH CORP4 citations72
US7211790B2May 1, 2007
Mass spectrometer and method of analyzing isomers
HITACHI HIGH TECH CORP5 citations70
US12360087B2Jul 15, 2025
Method of controlling liquid chromatograph and liquid chromatograph
HITACHI HIGH TECH CORP0 citations63
US12078620B2Sep 3, 2024
Analysis apparatus
HITACHI HIGH TECH CORP1 citations62
US11644448B2May 9, 2023
Chromatography mass spectrometry and chromatograph mass spectrometer
HITACHI HIGH TECH CORP1 citations62
US11385208B2Jul 12, 2022
Analysis device
HITACHI HIGH TECH CORP1 citations62
NEC CORP
10 patentsUS6091081AJul 18, 2000
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film
NEC CORP55 citations96
US6297145B1Oct 2, 2001
Method of forming a wiring layer having an air bridge construction
NEC CORP26 citations93
US6274439B1Aug 14, 2001
Process for fabricating semiconductor device with field effect transistor changeable in threshold voltage with hydrogen ion after formation of wirings
NEC CORP33 citations93
US5580826ADec 3, 1996
Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern
NEC CORP19 citations93
US6436790B2Aug 20, 2002
Method for fabrication semiconductor device having trench isolation structure
NEC CORP18 citations84
US5962341AOct 5, 1999
Semiconductor device and manufacturing method therefor
NEC CORP18 citations84
US6051491AApr 18, 2000
Multilevel interconnection structure for integrated circuits and method of producing same
NEC CORP9 citations74
US5773365AJun 30, 1998
Fabrication process of semiconductor device
NEC CORP12 citations74
US6372628B1Apr 16, 2002
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device
NEC CORP11 citations73
US5877082AMar 2, 1999
Method of manufacturing semiconductor device without plasma damage
NEC CORP6 citations63
TDK CORP
7 patentsUS11222752B2Jan 11, 2022
Ceramic electronic device
TDK CORP3 citations73
US11158460B2Oct 26, 2021
Ceramic electronic component with lead terminals having a coating layer
TDK CORP2 citations73
US11810723B2Nov 7, 2023
Ceramic electronic component
TDK CORP0 citations63
US12062495B2Aug 13, 2024
Electronic device
TDK CORP0 citations62
US11961676B2Apr 16, 2024
Electronic device
TDK CORP0 citations62
US11798743B2Oct 24, 2023
Electronic device
TDK CORP0 citations62
US11615920B2Mar 28, 2023
Ceramic electronic device
TDK CORP1 citations62
NEC ELECTRONICS CORP
2 patentsMATSUSHITA REFRIGERATION
2 patentsTOYOTA BOSHOKU KK
2 patentsSUMITOMO ELECTRIC INDUSTRIES
2 patentsAISIN SEIKI
1 patentOKI ELECTRIC IND CO LTD
1 patentTOSHIBA KK
1 patentHITACHI LTD
1 patentITO SHINYA
1 patentMITSUBISHI HEAVY IND LTD
1 patentFUNAKOSHI HARUHIRO
1 patentSEMICONDUCTOR TECH ACAD RES CT
1 patentSUMITOMO CHEMICAL CO
1 patentSUNTORY HOLDINGS LTD
1 patentDENSO CORP
1 patentJFE STEEL CORP
1 patentSHARP KK
1 patentShowing the top 50 of 103 patents by PatentIndex Score.