Inventor
JIN CHANGMING
US24 patents
⚠️ This page may combine multiple inventors who share the name “JIN CHANGMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
21 patentsUS6351039B1Feb 26, 2002
Integrated circuit dielectric and method
TEXAS INSTRUMENTS INC99 citations97
US6265303B1Jul 24, 2001
Integrated circuit dielectric and method
TEXAS INSTRUMENTS INC46 citations96
US6059553AMay 9, 2000
Integrated circuit dielectrics
TEXAS INSTRUMENTS INC131 citations96
US6008540ADec 28, 1999
Integrated circuit dielectric and method
TEXAS INSTRUMENTS INC81 citations96
US6800928B1Oct 5, 2004
Porous integrated circuit dielectric with decreased surface porosity
TEXAS INSTRUMENTS INC27 citations92
US6284675B1Sep 4, 2001
Method of forming integrated circuit dielectric by evaporating solvent to yield phase separation
TEXAS INSTRUMENTS INC42 citations92
US6838300B2Jan 4, 2005
Chemical treatment of low-k dielectric films
TEXAS INSTRUMENTS INC34 citations91
US6573167B2Jun 3, 2003
Using a carbon film as an etch hardmask for hard-to-etch materials
TEXAS INSTRUMENTS INC13 citations84
US7476602B2Jan 13, 2009
N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films
TEXAS INSTRUMENTS INC10 citations82
US6800547B2Oct 5, 2004
Integrated circuit dielectric and method
TEXAS INSTRUMENTS INC5 citations74
US7187080B2Mar 6, 2007
Semiconductor device with a conductive layer including a copper layer with a dopant
TEXAS INSTRUMENTS INC6 citations73
US6911394B2Jun 28, 2005
Semiconductor devices and methods of manufacturing such semiconductor devices
TEXAS INSTRUMENTS INC11 citations73
US6784121B1Aug 31, 2004
Integrated circuit dielectric and method
TEXAS INSTRUMENTS INC8 citations73
US6723636B1Apr 20, 2004
Methods for forming multiple damascene layers
TEXAS INSTRUMENTS INC7 citations70
US6583053B2Jun 24, 2003
Use of a sacrificial layer to facilitate metallization for small features
TEXAS INSTRUMENTS INC6 citations60
US6424040B1Jul 23, 2002
Integration of fluorinated dielectrics in multi-level metallizations
TEXAS INSTRUMENTS INC0 citations52
US7910936B2Mar 22, 2011
N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films
TEXAS INSTRUMENTS INC1 citations50
US6903000B2Jun 7, 2005
System for improving thermal stability of copper damascene structure
TEXAS INSTRUMENTS INC1 citations50
US7745335B2Jun 29, 2010
Semiconductor device manufactured by reducing hillock formation in metal interconnects
TEXAS INSTRUMENTS INC1 citations49
US7732324B2Jun 8, 2010
Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer
TEXAS INSTRUMENTS INC1 citations48
US7037823B2May 2, 2006
Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects
TEXAS INSTRUMENTS INC0 citations48