Inventor
DOAN KENNY L
US12 patents
⚠️ This page may combine multiple inventors who share the name “DOAN KENNY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
11 patentsUS7316761B2Jan 8, 2008
Apparatus for uniformly etching a dielectric layer
APPLIED MATERIALS INC178 citations97
US6403491B1Jun 11, 2002
Etch method using a dielectric etch chamber with expanded process window
APPLIED MATERIALS INC396 citations97
US7540971B2Jun 2, 2009
Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
APPLIED MATERIALS INC16 citations84
US7541292B2Jun 2, 2009
Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
APPLIED MATERIALS INC12 citations84
US7431859B2Oct 7, 2008
Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
APPLIED MATERIALS INC18 citations84
US6686293B2Feb 3, 2004
Method of etching a trench in a silicon-containing dielectric material
APPLIED MATERIALS INC18 citations80
US10504765B2Dec 10, 2019
Electrostatic chuck assembly having a dielectric filler
APPLIED MATERIALS INC2 citations72
US7105442B2Sep 12, 2006
Ashable layers for reducing critical dimensions of integrated circuit features
APPLIED MATERIALS INC9 citations71
US9748366B2Aug 29, 2017
Etching oxide-nitride stacks using C4F6H2
APPLIED MATERIALS INC2 citations69
US10930540B2Feb 23, 2021
Electrostatic chuck assembly having a dielectric filler
APPLIED MATERIALS INC0 citations62
US7846846B2Dec 7, 2010
Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
APPLIED MATERIALS INC4 citations62