P

Inventor

NGAI CHRISTOPHER S

US27 patents
⚠️ This page may combine multiple inventors who share the name “NGAI CHRISTOPHER S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

25 patents
US6355571B1Mar 12, 2002

Method and apparatus for reducing copper oxidation and contamination in a semiconductor device

APPLIED MATERIALS INC98 citations99
US6573030B1Jun 3, 2003

Method for depositing an amorphous carbon layer

APPLIED MATERIALS INC1,317 citations98
US6841341B2Jan 11, 2005

Method of depositing an amorphous carbon layer

APPLIED MATERIALS INC78 citations97
US7223526B2May 29, 2007

Method of depositing an amorphous carbon layer

APPLIED MATERIALS INC50 citations96
US6656840B2Dec 2, 2003

Method for forming silicon containing layers on a substrate

APPLIED MATERIALS INC54 citations93
US7335462B2Feb 26, 2008

Method of depositing an amorphous carbon layer

APPLIED MATERIALS INC24 citations92
US6946401B2Sep 20, 2005

Plasma treatment for copper oxide reduction

APPLIED MATERIALS INC28 citations92
US9502262B2Nov 22, 2016

Nanocrystalline diamond carbon film for 3D NAND hardmask application

APPLIED MATERIALS INC5 citations84
US6700202B2Mar 2, 2004

Semiconductor device having reduced oxidation interface

APPLIED MATERIALS INC8 citations74
US11437284B2Sep 6, 2022

Contact over active gate structure

APPLIED MATERIALS INC2 citations73
US10930555B2Feb 23, 2021

Contact over active gate structure

APPLIED MATERIALS INC2 citations73
US9865464B2Jan 9, 2018

Nanocrystalline diamond carbon film for 3D NAND hardmask application

APPLIED MATERIALS INC2 citations73
US9815091B2Nov 14, 2017

Roll to roll wafer backside particle and contamination removal

APPLIED MATERIALS INC2 citations73
US9728406B2Aug 8, 2017

Multi materials and selective removal enabled reverse tone process

APPLIED MATERIALS INC4 citations73
US11429026B2Aug 30, 2022

Lithography process window enhancement for photoresist patterning

APPLIED MATERIALS INC2 citations72
US7105442B2Sep 12, 2006

Ashable layers for reducing critical dimensions of integrated circuit features

APPLIED MATERIALS INC9 citations71
US12201030B2Jan 14, 2025

Spin-orbit torque MRAM structure and manufacture thereof

APPLIED MATERIALS INC0 citations62
US12198985B2Jan 14, 2025

Contact over active gate structure

APPLIED MATERIALS INC0 citations62
US11723283B2Aug 8, 2023

Spin-orbit torque MRAM structure and manufacture thereof

APPLIED MATERIALS INC0 citations62
US10957590B2Mar 23, 2021

Method for forming a layer

APPLIED MATERIALS INC0 citations62
US10930556B2Feb 23, 2021

Contact over active gate structure

APPLIED MATERIALS INC1 citations62
US9337051B2May 10, 2016

Method for critical dimension reduction using conformal carbon films

APPLIED MATERIALS INC2 citations62
US11914299B2Feb 27, 2024

Lithography process window enhancement for photoresist patterning

APPLIED MATERIALS INC0 citations61
US11650506B2May 16, 2023

Film structure for electric field guided photoresist patterning process

APPLIED MATERIALS INC0 citations61
US11880137B2Jan 23, 2024

Film structure for electric field guided photoresist patterning process

APPLIED MATERIALS INC0 citations60

DAI HUIXIONG

1 patent

HUANG JUDY H

1 patent