Inventor

SHIBATA MASATOMO

JP37 patents

⚠️ This page may combine multiple inventors who share the name “SHIBATA MASATOMO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIBATA MASATOMO

HITACHI CABLE

Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method

Semiconductor substrate made of group III nitride, and process for manufacture thereof

III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof

Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device

III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

III-V group nitride system semiconductor substrate

III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density

Group III nitride semiconductor substrate and its manufacturing method

Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate

Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same

III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

III-V nitride semiconductor substrate and its production method

Group III nitride based semiconductor substrate and process for manufacture thereof

Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method

III-V nitride semiconductor substrate and its production method

III-V group nitride system semiconductor substrate

Group III-V nitride-based semiconductor substrate and method of making same

III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method

III-V group nitride system semiconductor substrate

SUMITOMO CHEMICAL CO

Gallium nitride single crystal substrate

Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more

Gallium nitride single crystal substrate and method for producing the same

Semiconductor substrate manufacturing method

Nitride semiconductor single crystal substrate manufacturing method

SCIOCS CO LTD

Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate

Method for manufacturing group-III nitride substrate and group-III nitride substrate

Nitride crystal substrate

UNIV OSAKA

Method for manufacturing group-III nitride semiconductor crystal substrate

Method for manufacturing nitride crystal substrate and substrate for crystal growth

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

NEC CORP

Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate

Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure

SHIBATA MASATOMO

Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same

OSHIMA YUICHI

GaN single-crystal substrate and method for producing GaN single crystal

UNIV HOSEI

Gallium nitride laminated substrate and semiconductor device