P

Inventor

KAWADA YASUYUKI

JP41 patents
⚠️ This page may combine multiple inventors who share the name “KAWADA YASUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJI ELECTRIC CO LTD

20 patents
US7056605B2Jun 6, 2006

Perpendicular magnetic recording medium and method of manufacturing the same

FUJI ELECTRIC CO LTD19 citations92
US10096470B2Oct 9, 2018

Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate

FUJI ELECTRIC CO LTD2 citations73
US9559188B2Jan 31, 2017

Trench gate type semiconductor device and method of producing the same

FUJI ELECTRIC CO LTD2 citations72
US9209276B2Dec 8, 2015

Trench gate type semiconductor device and method of producing the same

FUJI ELECTRIC CO LTD4 citations72
US10186575B2Jan 22, 2019

Silicon carbide semiconductor device and a method of manufacturing a silicon carbide semiconductor device

FUJI ELECTRIC CO LTD1 citations59
US11888035B2Jan 30, 2024

Silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations57
US12550368B2Feb 10, 2026

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US12349402B2Jul 1, 2025

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US11600702B2Mar 7, 2023

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US11515387B2Nov 29, 2022

Method of manufacturing silicon carbide semiconductor device, method of manufacturing silicon carbide substrate, and silicon carbide substrate

FUJI ELECTRIC CO LTD0 citations52
US11424325B2Aug 23, 2022

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US9748149B2Aug 29, 2017

Method of manufacturing a silicon carbide semiconductor device including forming a protective film with a 2-layer structure comprised of silicon and carbon

FUJI ELECTRIC CO LTD0 citations52
US9502250B2Nov 22, 2016

Manufacturing method of silicon carbide semiconductor apparatus

FUJI ELECTRIC CO LTD0 citations52
US10032724B2Jul 24, 2018

Silicon carbide semiconductor base, method of crystal axis alignment in silicon carbide semiconductor base, and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD1 citations51
US10026610B2Jul 17, 2018

Silicon carbide semiconductor device manufacturing method

FUJI ELECTRIC CO LTD1 citations51
US9418840B2Aug 16, 2016

Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor device

FUJI ELECTRIC CO LTD1 citations51
US8802546B2Aug 12, 2014

Method for manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD1 citations51
US11430870B2Aug 30, 2022

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations48
US10818771B2Oct 27, 2020

Method of manufacturing silicon carbide semiconductor device, and method of manufacturing silicon carbide substrate

FUJI ELECTRIC CO LTD0 citations42
US9793121B2Oct 17, 2017

Method of manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations42

LION CORP

10 patents

KAWADA YASUYUKI

6 patents

FUJI ELEC DEVICE TECH CO LTD

3 patents

FUJI ELECTRIC HOLDINGS

1 patent

AIST

1 patent