Inventor

LIM HOON

KR33 patents

⚠️ This page may combine multiple inventors who share the name “LIM HOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM HOON

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices having thin film transistors and methods of fabricating the same

Semiconductor device having gate spacer containing conductive layer and manufacturing method therefor

Semiconductor memory device having three dimensional structure

Semiconductor device having a plurality of stacked transistors and method of fabricating the same

Semiconductor memory device and method for arranging and manufacturing the same

Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same

Method for making shallow trench isolation in semiconductor fabrication

Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same

Semiconductor device having three dimensional structure

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device having body contact through gate and method of fabricating the same

Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques

Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer

Transistors having a recessed channel region

Stacked load-less static random access memory device

Semiconductor memory devices having vertically-stacked transistors therein

Semiconductor transistor with multi-level transistor structure and method of fabricating the same

Methods of fabricating semiconductor devices having thin film transistors

Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon

Semiconductor device having silicide on gate sidewalls in isolation regions

Semiconductor device having silicide on gate sidewalls in isolation regions

Methods of fabricating semiconductor devices with a source/drain formed on a recessed portion of an isolation layer

Semiconductor device having a plurality of stacked transistors and method of fabricating the same

PARK HAN-BYUNG

Full CMOS SRAM

Interconnection structure and electronic device employing the same

JENKINS IAN

Adapter and method for mobile unit charging and communication

DAEMO ENG CO LTD

Hydraulic percussion device and construction apparatus having the same

YI BYUNG-JU

Needle-coupled parallel mechanism

JEONG JAE-HUN

Methods of forming semiconductor devices having self-aligned bodies

SAMSUNG SDI CO LTD

Lithium secondary battery and fabrication method thereof

MEDIPOST CO LTD

Pharmaceutical composition comprising mesenchymal stem cells as effective ingredient for prevention or treatment of inflammatory disease

LIM JUNG MIN

Bottle for packaging