Inventor
LEE BYUNG-HAK
KR33 patents
⚠️ This page may combine multiple inventors who share the name “LEE BYUNG-HAK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7696552B2Apr 13, 2010
Semiconductor devices including high-k dielectric materials
SAMSUNG ELECTRONICS CO LTD12 citations84
US7521316B2Apr 21, 2009
Methods of forming gate structures for semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US7534709B2May 19, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US7371669B2May 13, 2008
Method of forming a gate of a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations74
US8034701B2Oct 11, 2011
Methods of forming recessed gate electrodes having covered layer interfaces
SAMSUNG ELECTRONICS CO LTD3 citations63
US7875939B2Jan 25, 2011
Semiconductor device including an ohmic layer
SAMSUNG ELECTRONICS CO LTD2 citations63
US7772637B2Aug 10, 2010
Semiconductor devices including gate structures and leakage barrier oxides
SAMSUNG ELECTRONICS CO LTD3 citations63
US7759263B2Jul 20, 2010
Methods for fabricating improved gate dielectrics
SAMSUNG ELECTRONICS CO LTD5 citations63
US7582924B2Sep 1, 2009
Semiconductor devices having polymetal gate electrodes
SAMSUNG ELECTRONICS CO LTD6 citations63
US7582931B2Sep 1, 2009
Recessed gate electrodes having covered layer interfaces and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7550353B2Jun 23, 2009
Method of forming semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7544597B2Jun 9, 2009
Method of forming a semiconductor device including an ohmic layer
SAMSUNG ELECTRONICS CO LTD3 citations63
US7416968B2Aug 26, 2008
Methods of forming field effect transistors having metal silicide gate electrodes
SAMSUNG ELECTRONICS CO LTD2 citations63
US7989892B2Aug 2, 2011
Gate structure, and semiconductor device having a gate structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US7879737B2Feb 1, 2011
Methods for fabricating improved gate dielectrics
SAMSUNG ELECTRONICS CO LTD0 citations52
US7781849B2Aug 24, 2010
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
HYUNDAI ELECTRONICS IND
6 patentsUS6306743B1Oct 23, 2001
Method for forming a gate electrode on a semiconductor substrate
HYUNDAI ELECTRONICS IND78 citations96
US6221762B1Apr 24, 2001
Method for fabricating semiconductor device having improved step coverage and low resistivity contacts
HYUNDAI ELECTRONICS IND18 citations84
US6599821B2Jul 29, 2003
Method for fabricating conductive line pattern for semiconductor device
HYUNDAI ELECTRONICS IND8 citations74
US6432801B1Aug 13, 2002
Gate electrode in a semiconductor device and method for forming thereof
HYUNDAI ELECTRONICS IND8 citations74
US6531394B1Mar 11, 2003
Method for forming gate electrode of semiconductor device
HYUNDAI ELECTRONICS IND3 citations63
US6335297B1Jan 1, 2002
Method for forming conductive line of semiconductor device
HYUNDAI ELECTRONICS IND4 citations61
SAMSUNG SDI CO LTD
3 patentsUS6531820B1Mar 11, 2003
Plasma display device including grooves concentrating an electric field
SAMSUNG SDI CO LTD42 citations92
US7211953B2May 1, 2007
Plasma display device having portion where electrical field is concentrated
SAMSUNG SDI CO LTD0 citations51
US7499005B2Mar 3, 2009
Plasma display panel and driving method thereof
SAMSUNG SDI CO LTD0 citations42