Inventor
JIANG FENGYI
CN23 patents
⚠️ This page may combine multiple inventors who share the name “JIANG FENGYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LATTICE POWER JIANGXI CORP
17 patentsUS7741632B2Jun 22, 2010
InGaAIN light-emitting device containing carbon-based substrate and method for making the same
LATTICE POWER JIANGXI CORP24 citations89
US8361880B2Jan 29, 2013
Semiconductor light-emitting device with metal support substrate
LATTICE POWER JIANGXI CORP11 citations83
US7692205B2Apr 6, 2010
Semiconductor light-emitting device
LATTICE POWER JIANGXI CORP8 citations83
US7615420B2Nov 10, 2009
Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate
LATTICE POWER JIANGXI CORP10 citations83
US7758695B2Jul 20, 2010
Method for fabricating metal substrates with high-quality surfaces
LATTICE POWER JIANGXI CORP11 citations82
US7829359B2Nov 9, 2010
Method for fabricating highly reflective ohmic contact in light-emitting devices
LATTICE POWER JIANGXI CORP7 citations72
US7919784B2Apr 5, 2011
Semiconductor light-emitting device and method for making same
LATTICE POWER JIANGXI CORP2 citations62
US8383438B2Feb 26, 2013
Method for fabricating InGaAIN light-emitting diodes with a metal substrate
LATTICE POWER JIANGXI CORP4 citations61
US7943942B2May 17, 2011
Semiconductor light-emitting device with double-sided passivation
LATTICE POWER JIANGXI CORP6 citations61
US8354665B2Jan 15, 2013
Semiconductor light-emitting devices for generating arbitrary color
LATTICE POWER JIANGXI CORP2 citations60
US8044416B2Oct 25, 2011
Method for fabricating high-power light-emitting diode arrays
LATTICE POWER JIANGXI CORP2 citations60
US7705348B2Apr 27, 2010
Semiconductor light-emitting device with electrode for N-polar InGaAIN surface
LATTICE POWER JIANGXI CORP3 citations60
US7888779B2Feb 15, 2011
Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
LATTICE POWER JIANGXI CORP3 citations57
US7977663B2Jul 12, 2011
Semiconductor light-emitting device with a highly reflective ohmic-electrode
LATTICE POWER JIANGXI CORP0 citations50
US8053757B2Nov 8, 2011
Gallium nitride light-emitting device with ultra-high reverse breakdown voltage
LATTICE POWER JIANGXI CORP1 citations48
US7902556B2Mar 8, 2011
Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates
LATTICE POWER JIANGXI CORP0 citations46
US8384100B2Feb 26, 2013
InGaAIN light-emitting device and manufacturing method thereof
LATTICE POWER JIANGXI CORP0 citations37
JIANG FENGYI
3 patentsUS8461029B2Jun 11, 2013
Method for fabricating InGaN-based multi-quantum well layers
JIANG FENGYI0 citations46
US8431936B2Apr 30, 2013
Method for fabricating a p-type semiconductor structure
JIANG FENGYI0 citations36
US8431475B2Apr 30, 2013
Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature
JIANG FENGYI0 citations36