P

Inventor

ISHIZUKA TOHRU

JP13 patents
⚠️ This page may combine multiple inventors who share the name “ISHIZUKA TOHRU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINETSU HANDOTAI KK

4 patents
US6423285B1Jul 23, 2002

Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the method

SHINETSU HANDOTAI KK23 citations91
US7861421B2Jan 4, 2011

Method for measuring rotation angle of bonded wafer

SHINETSU HANDOTAI KK8 citations83
US7799660B2Sep 21, 2010

Method for manufacturing SOI substrate

SHINETSU HANDOTAI KK0 citations41
US9142449B2Sep 22, 2015

Method for manufacturing bonded wafer

SHINETSU HANDOTAI KK0 citations40

ISHIZUKA TOHRU

3 patents
US8466538B2Jun 18, 2013

SOI wafer, semiconductor device, and method for manufacturing SOI wafer

ISHIZUKA TOHRU0 citations48
US8697544B2Apr 15, 2014

Method for manufacturing bonded wafer

ISHIZUKA TOHRU0 citations37
US8202787B2Jun 19, 2012

Method for manufacturing SOI wafer

ISHIZUKA TOHRU0 citations37

TANABE SEIYAKU CO

2 patents
US4829067AMay 9, 1989

Benzo-furan derivative

TANABE SEIYAKU CO11 citations71
US4882340ANov 21, 1989

Benzofuran derivative and processes for preparing the same

TANABE SEIYAKU CO2 citations60

KATO MASAHIRO

1 patent
US8823130B2Sep 2, 2014

Silicon epitaxial wafer, method for manufacturing the same, bonded SOI wafer and method for manufacturing the same

KATO MASAHIRO4 citations72

KOBAYASHI NORIHIRO

1 patent
US8097523B2Jan 17, 2012

Method for manufacturing bonded wafer

KOBAYASHI NORIHIRO3 citations60

TANABE SEIKAYU CO LTD

1 patent
US5252589AOct 12, 1993

Benzocycloheptene derivative and process for preparation thereof

TANABE SEIKAYU CO LTD3 citations55

TAKENO HIROSHI

1 patent
US8338277B2Dec 25, 2012

Method for manufacturing SOI substrate

TAKENO HIROSHI0 citations34