Inventor
ZHANG MINXIAN MAX
US21 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG MINXIAN MAX”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANG JIANHUA
9 patentsUS9082533B2Jul 14, 2015
Memristive element based on hetero-junction oxide
YANG JIANHUA7 citations84
US8921960B2Dec 30, 2014
Memristor cell structures for high density arrays
YANG JIANHUA8 citations84
US9224949B2Dec 29, 2015
Memristive elements that exhibit minimal sneak path current
YANG JIANHUA6 citations73
US8767438B2Jul 1, 2014
Memelectronic device
YANG JIANHUA4 citations71
US8872153B2Oct 28, 2014
Device structure for long endurance memristors
YANG JIANHUA2 citations62
US8487289B2Jul 16, 2013
Electrically actuated device
YANG JIANHUA3 citations62
US9159476B2Oct 13, 2015
Negative differential resistance device
YANG JIANHUA0 citations52
US9257645B2Feb 9, 2016
Memristors having mixed oxide phases
YANG JIANHUA0 citations51
US9885937B2Feb 6, 2018
Dynamic optical crossbar array
YANG JIANHUA0 citations42
HEWLETT PACKARD ENTPR DEV LP
3 patentsUS9793473B2Oct 17, 2017
Memristor structures
HEWLETT PACKARD ENTPR DEV LP3 citations73
US10096651B2Oct 9, 2018
Resistive memory devices and arrays
HEWLETT PACKARD ENTPR DEV LP3 citations70
US10147762B2Dec 4, 2018
Protective elements for non-volatile memory cells in crossbar arrays
HEWLETT PACKARD ENTPR DEV LP0 citations52
HEWLETT PACKARD DEVELOPMENT CO
3 patentsUS8385101B2Feb 26, 2013
Memory resistor having plural different active materials
HEWLETT PACKARD DEVELOPMENT CO6 citations73
US9331278B2May 3, 2016
Forming memristors on imaging devices
HEWLETT PACKARD DEVELOPMENT CO2 citations63
US8779409B2Jul 15, 2014
Low energy memristors with engineered switching channel materials
HEWLETT PACKARD DEVELOPMENT CO3 citations63