Inventor
NOSHIRO HIDEYUKI
JP23 patents
⚠️ This page may combine multiple inventors who share the name “NOSHIRO HIDEYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
17 patentsUS5874364AFeb 23, 1999
Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
FUJITSU LTD81 citations96
US6515843B2Feb 4, 2003
Semiconductor capacitive device
FUJITSU LTD24 citations92
US5679213AOct 21, 1997
Method for patterning a metal film
FUJITSU LTD35 citations92
US6495412B1Dec 17, 2002
Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
FUJITSU LTD22 citations90
US6291291B1Sep 18, 2001
Semiconductor device and method of manufacturing the same
FUJITSU LTD5 citations73
US6271077B1Aug 7, 2001
Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
FUJITSU LTD12 citations73
US6060736AMay 9, 2000
Semiconductor device and method of manufacturing the same
FUJITSU LTD8 citations73
US6617626B2Sep 9, 2003
Ferroelectric semiconductor memory device and a fabrication process thereof
FUJITSU LTD7 citations72
US7029984B2Apr 18, 2006
Method for fabricating semiconductor device
FUJITSU LTD8 citations71
US5248663ASep 28, 1993
Method of forming oxide superconductor patterns
FUJITSU LTD4 citations61
US11328769B2May 10, 2022
Resistance change device, manufacturing method for the same, and storage apparatus
FUJITSU LTD0 citations51
US8350244B2Jan 8, 2013
Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
FUJITSU LTD1 citations51
US7038264B2May 2, 2006
Semiconductor device and method for manufacturing the same
FUJITSU LTD0 citations51
US6812041B2Nov 2, 2004
Method of manufacturing ferroelectric capacitor using a sintering assistance film
FUJITSU LTD0 citations51
US6777287B2Aug 17, 2004
Ferroelectric semiconductor memory device and a fabrication process thereof
FUJITSU LTD1 citations51
US9218869B2Dec 22, 2015
Memory device
FUJITSU LTD0 citations41
US8750034B2Jun 10, 2014
Magnetoresistance element and semiconductor memory device
FUJITSU LTD0 citations41
NOSHIRO HIDEYUKI
5 patentsUS8482953B2Jul 9, 2013
Composite resistance variable element and method for manufacturing the same
NOSHIRO HIDEYUKI5 citations71
US8227782B2Jul 24, 2012
Resistance change element and method of manufacturing the same
NOSHIRO HIDEYUKI6 citations71
US8106377B2Jan 31, 2012
Resistance change element and method of manufacturing the same
NOSHIRO HIDEYUKI3 citations61
US8533938B2Sep 17, 2013
Method of manufacturing resistance change element
NOSHIRO HIDEYUKI1 citations50
US8811058B2Aug 19, 2014
Resistance change element, method for manufacturing the same, and semiconductor memory
NOSHIRO HIDEYUKI0 citations40