P

Inventor

WERNERSSON LARS-ERIK

SE13 patents
⚠️ This page may combine multiple inventors who share the name “WERNERSSON LARS-ERIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WERNERSSON LARS-ERIK

3 patents
US8063450B2Nov 22, 2011

Assembly of nanoscaled field effect transistors

WERNERSSON LARS-ERIK90 citations95
US8330143B2Dec 11, 2012

Semiconductor nanowire transistor

WERNERSSON LARS-ERIK16 citations89
US8890117B2Nov 18, 2014

Nanowire circuit architecture

WERNERSSON LARS-ERIK8 citations82

OHLSSON JONAS

3 patents
US8178403B2May 15, 2012

Method of producing precision vertical and horizontal layers in a vertical semiconductor structure

OHLSSON JONAS5 citations71
US8551834B2Oct 8, 2013

Method of producing precision vertical and horizontal layers in a vertical semiconductor structure

OHLSSON JONAS4 citations61
US9087896B2Jul 21, 2015

Method of producing precision vertical and horizontal layers in a vertical semiconductor structure

OHLSSON JONAS0 citations51

QUNANO AB

2 patents
US8344361B2Jan 1, 2013

Semiconductor nanowire vertical device architecture

QUNANO AB6 citations82
US10090292B2Oct 2, 2018

Radial nanowire Esaki diode devices and methods

QUNANO AB0 citations34

EGARD MIKAEL

2 patents
US9608567B2Mar 28, 2017

Transceiver module

EGARD MIKAEL4 citations65
US9117753B2Aug 25, 2015

Process for manufacturing a semiconductor device and an intermediate product for the manufacture of a semiconductor device

EGARD MIKAEL2 citations57

C2AMPS AB

2 patents
US12402375B2Aug 26, 2025

Asymmetric vertical nanowire MOSFET having asymmetric nanowire geometry near metal gate and method of fabricating thereof

C2AMPS AB0 citations37
US11621346B2Apr 4, 2023

Vertical metal oxide semiconductor field effect transistor (MOSFET) and a method of forming the same

C2AMPS AB0 citations37

WERNERSSON LARS ERIK

1 patent
US10361284B2Jul 23, 2019

Method for vertical gate-last process

WERNERSSON LARS ERIK1 citations53