Inventor
XIE CHANGQING
CN15 patents
⚠️ This page may combine multiple inventors who share the name “XIE CHANGQING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INST OF MICROELECTRONICS CAS
11 patentsUS12588423B2Mar 24, 2026
Magnetoresistive device, method for changing resistance state thereof, and synapse learning module
INST OF MICROELECTRONICS CAS0 citations62
US10964529B2Mar 30, 2021
Method for cleaning lanthanum gallium silicate wafer
INST OF MICROELECTRONICS CAS0 citations61
US12525271B2Jan 13, 2026
Multi-resistance-state spintronic device, read-write circuit, and in-memory Boolean logic operator
INST OF MICROELECTRONICS CAS0 citations51
US9455741B2Sep 27, 2016
Method for collecting signal with sampling frequency lower than Nyquist frequency
INST OF MICROELECTRONICS CAS0 citations50
US12520730B2Jan 6, 2026
Sot-driven field-free switching MRAM and array thereof
INST OF MICROELECTRONICS CAS0 citations49
US12293781B2May 6, 2025
Three-state spintronic device, memory cell, memory array and read-write circuit
INST OF MICROELECTRONICS CAS0 citations49
US12287454B2Apr 29, 2025
Method for fabricating anti-reflective layer on quartz surface by using metal-induced self-masking etching technique
INST OF MICROELECTRONICS CAS0 citations44
US9762217B2Sep 12, 2017
Random sampler adapted to one-dimension slow-varying signal
INST OF MICROELECTRONICS CAS0 citations39
US9442230B2Sep 13, 2016
Sub-wavelength extreme ultraviolet metal transmission grating and manufacturing method thereof
INST OF MICROELECTRONICS CAS0 citations39
US9562884B2Feb 7, 2017
Method for manufacturing NO2 gas sensor for detection at room temperature
INST OF MICROELECTRONICS CAS0 citations37
US9418843B2Aug 16, 2016
Method for manufacturing ordered nanowire array of NiO doped with Pt in situ
INST OF MICROELECTRONICS CAS0 citations37