Inventor
MUI MAN
US39 patents
⚠️ This page may combine multiple inventors who share the name “MUI MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
29 patentsUS9502471B1Nov 22, 2016
Multi tier three-dimensional memory devices including vertically shared bit lines
SANDISK TECHNOLOGIES INC116 citations98
US9236128B1Jan 12, 2016
Voltage kick to non-selected word line during programming
SANDISK TECHNOLOGIES INC35 citations94
US9218874B1Dec 22, 2015
Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping
SANDISK TECHNOLOGIES INC32 citations93
US9142305B2Sep 22, 2015
System to reduce stress on word line select transistor during erase operation
SANDISK TECHNOLOGIES INC21 citations92
US8966330B1Feb 24, 2015
Bad block reconfiguration in nonvolatile memory
SANDISK TECHNOLOGIES INC19 citations92
US8913431B1Dec 16, 2014
Pseudo block operation mode in 3D NAND
SANDISK TECHNOLOGIES INC28 citations92
US8902658B1Dec 2, 2014
Three-dimensional NAND memory with adaptive erase
SANDISK TECHNOLOGIES INC22 citations92
US8902661B1Dec 2, 2014
Block structure profiling in three dimensional memory
SANDISK TECHNOLOGIES INC26 citations92
US7974134B2Jul 5, 2011
Voltage generator to compensate sense amplifier trip point over temperature in non-volatile memory
SANDISK TECHNOLOGIES INC25 citations92
US9312026B2Apr 12, 2016
Zoned erase verify in three dimensional nonvolatile memory
SANDISK TECHNOLOGIES INC12 citations84
US9305648B2Apr 5, 2016
Techniques for programming of select gates in NAND memory
SANDISK TECHNOLOGIES INC9 citations84
US9240241B2Jan 19, 2016
Pseudo block operation mode in 3D NAND
SANDISK TECHNOLOGIES INC8 citations84
US9142324B2Sep 22, 2015
Bad block reconfiguration in nonvolatile memory
SANDISK TECHNOLOGIES INC5 citations84
US9105349B2Aug 11, 2015
Adaptive operation of three dimensional memory
SANDISK TECHNOLOGIES INC14 citations84
US9092363B2Jul 28, 2015
Selection of data for redundancy calculation in three dimensional nonvolatile memory
SANDISK TECHNOLOGIES INC10 citations84
US8971119B2Mar 3, 2015
Select transistor tuning
SANDISK TECHNOLOGIES INC11 citations84
US8964467B1Feb 24, 2015
Systems and methods for partial page programming of multi level cells
SANDISK TECHNOLOGIES INC13 citations84
US7974133B2Jul 5, 2011
Robust sensing circuit and method
SANDISK TECHNOLOGIES INC11 citations84
US8923054B1Dec 30, 2014
Pseudo block operation mode in 3D NAND
SANDISK TECHNOLOGIES INC7 citations81
US9318210B1Apr 19, 2016
Word line kick during sensing: trimming and adjacent word lines
SANDISK TECHNOLOGIES INC14 citations80
US9240238B2Jan 19, 2016
Back gate operation with elevated threshold voltage
SANDISK TECHNOLOGIES INC3 citations73
US9229856B2Jan 5, 2016
Optimized configurable NAND parameters
SANDISK TECHNOLOGIES INC4 citations73
US9136022B2Sep 15, 2015
Selection of data for redundancy calculation by likely error rate
SANDISK TECHNOLOGIES INC4 citations73
US8929141B1Jan 6, 2015
Three-dimensional NAND memory with adaptive erase
SANDISK TECHNOLOGIES INC5 citations73
US9076544B2Jul 7, 2015
Operation for non-volatile storage system with shared bit lines
SANDISK TECHNOLOGIES INC2 citations62
US9058881B1Jun 16, 2015
Systems and methods for partial page programming of multi level cells
SANDISK TECHNOLOGIES INC3 citations62
US9047971B2Jun 2, 2015
Operation for non-volatile storage system with shared bit lines
SANDISK TECHNOLOGIES INC3 citations62
US9177673B2Nov 3, 2015
Selection of data for redundancy calculation by likely error rate
SANDISK TECHNOLOGIES INC0 citations52
US9111627B2Aug 18, 2015
Fast-reading NAND flash memory
SANDISK TECHNOLOGIES INC1 citations51
SANDISK TECHNOLOGIES LLC
7 patentsUS9947407B2Apr 17, 2018
Techniques for programming of select gates in NAND memory
SANDISK TECHNOLOGIES LLC5 citations84
US9659656B2May 23, 2017
Techniques for programming of select gates in NAND memory
SANDISK TECHNOLOGIES LLC5 citations84
US9627046B2Apr 18, 2017
Programming techniques for non-volatile memories with charge trapping layers
SANDISK TECHNOLOGIES LLC7 citations84
US9633742B2Apr 25, 2017
Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices
SANDISK TECHNOLOGIES LLC19 citations82
US9947395B2Apr 17, 2018
Programming techniques for non-volatile memories with charge trapping layers
SANDISK TECHNOLOGIES LLC2 citations73
US9595338B2Mar 14, 2017
Utilizing NAND strings in dummy blocks for faster bit line precharge
SANDISK TECHNOLOGIES LLC2 citations72
US9959915B2May 1, 2018
Voltage generator to compensate for process corner and temperature variations
SANDISK TECHNOLOGIES LLC2 citations71