Inventor
LEE TSUNG-HSIUNG
TW31 patents
⚠️ This page may combine multiple inventors who share the name “LEE TSUNG-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
17 patentsUS8987820B1Mar 24, 2015
Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP9 citations84
US8803236B1Aug 12, 2014
Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP13 citations84
US10043824B2Aug 7, 2018
Semiconductor device including a vacuum gap and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP2 citations68
US9209169B1Dec 8, 2015
Semiconductor device
VANGUARD INT SEMICONDUCT CORP3 citations62
US11569121B2Jan 31, 2023
Methods for forming semiconductor devices
VANGUARD INT SEMICONDUCT CORP0 citations58
US10600809B2Mar 24, 2020
Semiconductor structure and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP1 citations55
US10644132B2May 5, 2020
Method and apparatus for MOS device with doped region
VANGUARD INT SEMICONDUCT CORP0 citations52
US9608107B2Mar 28, 2017
Method and apparatus for MOS device with doped region
VANGUARD INT SEMICONDUCT CORP0 citations52
US9076677B2Jul 7, 2015
Method for fabricating semiconductor device with super junction structure
VANGUARD INT SEMICONDUCT CORP0 citations52
US9666485B2May 30, 2017
Method for forming semiconductor device having super-junction structures
VANGUARD INT SEMICONDUCT CORP0 citations51
US9406742B2Aug 2, 2016
Semiconductor device having super-junction structures
VANGUARD INT SEMICONDUCT CORP0 citations51
US10256298B2Apr 9, 2019
Semiconductor structure and method for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations48
US9634099B2Apr 25, 2017
Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP0 citations42
US9773681B2Sep 26, 2017
Semiconductor device with a trench and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP0 citations41
US9324786B2Apr 26, 2016
Semiconductor device and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP0 citations41
US9178057B2Nov 3, 2015
Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP0 citations41
US9048115B2Jun 2, 2015
Superjunction transistor with implantation barrier at the bottom of a trench
VANGUARD INT SEMICONDUCT CORP0 citations37
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS9160351B2Oct 13, 2015
Phase-locked loop circuit
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9653927B2May 16, 2017
Composite integrated circuits and methods for wireless interactions therewith
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11387683B2Jul 12, 2022
Composite integrated circuits and methods for wireless interactions therewith
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9584141B2Feb 28, 2017
All digital phase-locked loop
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790707B2Sep 29, 2020
Composite integrated circuits and methods for wireless interactions therewith
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10164480B2Dec 25, 2018
Composite integrated circuits and methods for wireless interactions therewith
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9350324B2May 24, 2016
MCML retention flip-flop/latch for low power applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
LEE TSUNG-HSIUNG
4 patentsUS8836017B2Sep 16, 2014
Semiconductor device and fabricating method thereof
LEE TSUNG-HSIUNG11 citations83
US8643089B2Feb 4, 2014
Semiconductor device and fabricating method thereof
LEE TSUNG-HSIUNG12 citations83
US9076887B2Jul 7, 2015
Method of fabricating a vertical diffusion metal-oxide-semiconductor transistor
LEE TSUNG-HSIUNG11 citations82
US8901641B2Dec 2, 2014
Semiconductor device with super junction structure and method for fabricating the same
LEE TSUNG-HSIUNG0 citations51