P

Inventor

TAO QIAN

US100 patents
⚠️ This page may combine multiple inventors who share the name “TAO QIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

18 patents
US9305929B1Apr 5, 2016

Memory cells

MICRON TECHNOLOGY INC60 citations98
US10083981B2Sep 25, 2018

Memory arrays, and methods of forming memory arrays

MICRON TECHNOLOGY INC22 citations93
US9231206B2Jan 5, 2016

Methods of forming a ferroelectric memory cell

MICRON TECHNOLOGY INC21 citations92
US10923657B2Feb 16, 2021

Methods of forming memory cells and memory devices

MICRON TECHNOLOGY INC5 citations84
US10403630B2Sep 3, 2019

Semiconductor devices including ferroelectric materials

MICRON TECHNOLOGY INC3 citations84
US10242989B2Mar 26, 2019

Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods

MICRON TECHNOLOGY INC8 citations84
US10217753B2Feb 26, 2019

Memory cells

MICRON TECHNOLOGY INC3 citations84
US10193064B2Jan 29, 2019

Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

MICRON TECHNOLOGY INC8 citations84
US9887204B2Feb 6, 2018

Memory cells

MICRON TECHNOLOGY INC4 citations84
US9716225B2Jul 25, 2017

Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

MICRON TECHNOLOGY INC10 citations84
US9698343B2Jul 4, 2017

Semiconductor device structures including ferroelectric memory cells

MICRON TECHNOLOGY INC3 citations84
US9673203B2Jun 6, 2017

Memory cells

MICRON TECHNOLOGY INC7 citations84
US9147689B1Sep 29, 2015

Methods of forming ferroelectric capacitors

MICRON TECHNOLOGY INC13 citations84
US11244951B2Feb 8, 2022

Memory cells

MICRON TECHNOLOGY INC1 citations73
US10418554B2Sep 17, 2019

Methods of forming memory cells and semiconductor devices

MICRON TECHNOLOGY INC3 citations73
US10304853B2May 28, 2019

Memory arrays, and methods of forming memory arrays

MICRON TECHNOLOGY INC1 citations72
US11289487B2Mar 29, 2022

Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods

MICRON TECHNOLOGY INC3 citations71
US10062703B2Aug 28, 2018

Methods of forming a ferroelectric memory cell

MICRON TECHNOLOGY INC1 citations63

YANGTZE MEMORY TECH CO LTD

17 patents
US10283452B2May 7, 2019

Three-dimensional memory devices having a plurality of NAND strings

YANGTZE MEMORY TECH CO LTD61 citations98
US10147732B1Dec 4, 2018

Source structure of three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD66 citations98
US11133325B2Sep 28, 2021

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD14 citations93
US10580788B2Mar 3, 2020

Methods for forming three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD14 citations85
US11211397B2Dec 28, 2021

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD6 citations84
US11031333B2Jun 8, 2021

Three-dimensional memory devices having a plurality of NAND strings

YANGTZE MEMORY TECH CO LTD8 citations84
US10868031B2Dec 15, 2020

Multiple-stack three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD5 citations83
US10680003B2Jun 9, 2020

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD6 citations83
US10658378B2May 19, 2020

Through array contact (TAC) for three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD9 citations82
US10804279B2Oct 13, 2020

Source structure of three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US11991880B2May 21, 2024

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD2 citations72
US11145666B2Oct 12, 2021

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD1 citations72
US10910390B2Feb 2, 2021

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD1 citations72
US10847528B2Nov 24, 2020

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations72
US10644015B2May 5, 2020

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations72
US10515975B1Dec 24, 2019

Method for forming dual-deck channel hole structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD6 citations72
US10937806B2Mar 2, 2021

Through array contact (TAC) for three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD2 citations71

AVAGO TECHNOLOGIES GENERAL IP

4 patents

HEWLETT PACKARD DEVELOPMENT CO

3 patents

LIM KHIM YAM

2 patents

WUXI PETABYTE TECH CO LTD

1 patent

INTEL CORP

1 patent

AGILENT TECHNOLOGIES INC

1 patent

TAO QIAN

1 patent

AVAGO TECH INT SALES PTE LID

1 patent

HEWLETT PACKARD DEVELOPMENT CO LP

1 patent

Showing the top 50 of 100 patents by PatentIndex Score.