Inventor
TAO QIAN
US100 patents
⚠️ This page may combine multiple inventors who share the name “TAO QIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
18 patentsUS9305929B1Apr 5, 2016
Memory cells
MICRON TECHNOLOGY INC60 citations98
US10083981B2Sep 25, 2018
Memory arrays, and methods of forming memory arrays
MICRON TECHNOLOGY INC22 citations93
US9231206B2Jan 5, 2016
Methods of forming a ferroelectric memory cell
MICRON TECHNOLOGY INC21 citations92
US10923657B2Feb 16, 2021
Methods of forming memory cells and memory devices
MICRON TECHNOLOGY INC5 citations84
US10403630B2Sep 3, 2019
Semiconductor devices including ferroelectric materials
MICRON TECHNOLOGY INC3 citations84
US10242989B2Mar 26, 2019
Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
MICRON TECHNOLOGY INC8 citations84
US10217753B2Feb 26, 2019
Memory cells
MICRON TECHNOLOGY INC3 citations84
US10193064B2Jan 29, 2019
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
MICRON TECHNOLOGY INC8 citations84
US9887204B2Feb 6, 2018
Memory cells
MICRON TECHNOLOGY INC4 citations84
US9716225B2Jul 25, 2017
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
MICRON TECHNOLOGY INC10 citations84
US9698343B2Jul 4, 2017
Semiconductor device structures including ferroelectric memory cells
MICRON TECHNOLOGY INC3 citations84
US9673203B2Jun 6, 2017
Memory cells
MICRON TECHNOLOGY INC7 citations84
US9147689B1Sep 29, 2015
Methods of forming ferroelectric capacitors
MICRON TECHNOLOGY INC13 citations84
US11244951B2Feb 8, 2022
Memory cells
MICRON TECHNOLOGY INC1 citations73
US10418554B2Sep 17, 2019
Methods of forming memory cells and semiconductor devices
MICRON TECHNOLOGY INC3 citations73
US10304853B2May 28, 2019
Memory arrays, and methods of forming memory arrays
MICRON TECHNOLOGY INC1 citations72
US11289487B2Mar 29, 2022
Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods
MICRON TECHNOLOGY INC3 citations71
US10062703B2Aug 28, 2018
Methods of forming a ferroelectric memory cell
MICRON TECHNOLOGY INC1 citations63
YANGTZE MEMORY TECH CO LTD
17 patentsUS10283452B2May 7, 2019
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD61 citations98
US10147732B1Dec 4, 2018
Source structure of three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD66 citations98
US11133325B2Sep 28, 2021
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations93
US10580788B2Mar 3, 2020
Methods for forming three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD14 citations85
US11211397B2Dec 28, 2021
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD6 citations84
US11031333B2Jun 8, 2021
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD8 citations84
US10868031B2Dec 15, 2020
Multiple-stack three-dimensional memory device and fabrication method thereof
YANGTZE MEMORY TECH CO LTD5 citations83
US10680003B2Jun 9, 2020
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10658378B2May 19, 2020
Through array contact (TAC) for three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD9 citations82
US10804279B2Oct 13, 2020
Source structure of three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US11991880B2May 21, 2024
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD2 citations72
US11145666B2Oct 12, 2021
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10910390B2Feb 2, 2021
Memory device and forming method thereof
YANGTZE MEMORY TECH CO LTD1 citations72
US10847528B2Nov 24, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10644015B2May 5, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US10515975B1Dec 24, 2019
Method for forming dual-deck channel hole structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations72
US10937806B2Mar 2, 2021
Through array contact (TAC) for three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD2 citations71
AVAGO TECHNOLOGIES GENERAL IP
4 patentsUS9087853B2Jul 21, 2015
Isolation device
AVAGO TECHNOLOGIES GENERAL IP16 citations92
US9793203B2Oct 17, 2017
Isolation device
AVAGO TECHNOLOGIES GENERAL IP11 citations83
US9576891B1Feb 21, 2017
Isolation device
AVAGO TECHNOLOGIES GENERAL IP9 citations83
US9520354B1Dec 13, 2016
Silicon designs for high voltage isolation
AVAGO TECHNOLOGIES GENERAL IP7 citations78
HEWLETT PACKARD DEVELOPMENT CO
3 patentsLIM KHIM YAM
2 patentsWUXI PETABYTE TECH CO LTD
1 patentINTEL CORP
1 patentAGILENT TECHNOLOGIES INC
1 patentTAO QIAN
1 patentAVAGO TECH INT SALES PTE LID
1 patentHEWLETT PACKARD DEVELOPMENT CO LP
1 patentShowing the top 50 of 100 patents by PatentIndex Score.