Inventor
PARK CHANHO
KR31 patents
⚠️ This page may combine multiple inventors who share the name “PARK CHANHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS5432360AJul 11, 1995
Semiconductor device including an anode layer having low density regions by selective diffusion
SAMSUNG ELECTRONICS CO LTD21 citations86
US11137798B2Oct 5, 2021
Electronic device
SAMSUNG ELECTRONICS CO LTD5 citations83
US9306049B2Apr 5, 2016
Hetero junction field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations79
US11585704B2Feb 21, 2023
Structure for detecting temperature of electronic device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10557757B2Feb 11, 2020
Structure for detecting temperature of electronic device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11940840B2Mar 26, 2024
Electronic device
SAMSUNG ELECTRONICS CO LTD1 citations72
US9864504B2Jan 9, 2018
User Interface (UI) display method and apparatus of touch-enabled device
SAMSUNG ELECTRONICS CO LTD3 citations71
US12455197B2Oct 28, 2025
Structure for detecting temperature of electronic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12242300B2Mar 4, 2025
Electronic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11668610B2Jun 6, 2023
Structure for detecting temperature of electronic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US10955298B2Mar 23, 2021
Structure for detecting temperature of electronic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12249003B2Mar 11, 2025
Device and method with data preprocessing
SAMSUNG ELECTRONICS CO LTD0 citations47
US11070241B2Jul 20, 2021
Method for performing communication with external electronic device using resonant frequency modified according to proximity of external object, and electronic device supporting same
SAMSUNG ELECTRONICS CO LTD0 citations42
FAIRCHILD SEMICONDUCTOR
4 patentsUS7544571B2Jun 9, 2009
Trench gate FET with self-aligned features
FAIRCHILD SEMICONDUCTOR21 citations92
US7504691B2Mar 17, 2009
Power trench MOSFETs having SiGe/Si channel structure
FAIRCHILD SEMICONDUCTOR21 citations92
US7595542B2Sep 29, 2009
Periphery design for charge balance power devices
FAIRCHILD SEMICONDUCTOR31 citations91
US7935561B2May 3, 2011
Method of forming shielded gate FET with self-aligned features
FAIRCHILD SEMICONDUCTOR1 citations52
VISHAY SILICONIX
4 patentsUS9673314B2Jun 6, 2017
Semiconductor device with non-uniform trench oxide layer
VISHAY SILICONIX2 citations72
US11004841B2May 11, 2021
Semiconductor device having multiple gate pads
VISHAY SILICONIX0 citations61
US10256227B2Apr 9, 2019
Semiconductor device having multiple gate pads
VISHAY SILICONIX0 citations51
US9978859B2May 22, 2018
Semiconductor device with non-uniform trench oxide layer
VISHAY SILICONIX0 citations51
UNIV INDUSTRY FOUNDATION UIF YONSEI UNIV
2 patentsUS10622919B2Apr 14, 2020
Nano-porous thin film, methods of fabricating thereof and triboelectric generator using the same
UNIV INDUSTRY FOUNDATION UIF YONSEI UNIV2 citations66
US11696709B2Jul 11, 2023
Liquid information sensor and method of driving the same
UNIV INDUSTRY FOUNDATION UIF YONSEI UNIV0 citations49