Inventor
LEE CHIH-MING
TW43 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHIH-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
36 patentsUS10163831B2Dec 25, 2018
Semiconductor device with post passivation structure and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US11373971B2Jun 28, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10748911B2Aug 18, 2020
Integrated circuit for low power SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10163641B2Dec 25, 2018
Memory with a raised dummy feature surrounding a cell region
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10164073B2Dec 25, 2018
Apparatus and method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12068271B2Aug 20, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12010826B2Jun 11, 2024
Semiconductor device having a butted contact and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11756913B2Sep 12, 2023
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11610901B2Mar 21, 2023
Semiconductor device having a butted contact, method of forming and method of using
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10861859B2Dec 8, 2020
Memory cells with butted contacts and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10734489B2Aug 4, 2020
Method for forming semiconductor device structure with metal silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527543B2Dec 13, 2022
Polysilicon removal in word line contact region of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12464714B2Nov 4, 2025
Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11925017B2Mar 5, 2024
Semiconductor device having a wall structure surrounding a stacked gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594449B2Feb 28, 2023
Method of making a semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121141B2Sep 14, 2021
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964589B2Mar 30, 2021
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12381166B2Aug 5, 2025
Method of making semiconductor structure including buffer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12183793B2Dec 31, 2024
Method for forming semiconductor device structure with metal-semiconductor compound layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12052851B2Jul 30, 2024
Integrated circuit structure for low power SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11810879B2Nov 7, 2023
Semiconductor structure including buffer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11462550B2Oct 4, 2022
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11309268B2Apr 19, 2022
Method of designing a layout, method of making a semiconductor structure and semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11101354B2Aug 24, 2021
Method for forming semiconductor device structure with metal silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520521B2Jan 6, 2026
Method of forming high voltage transistor and structure resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12376297B2Jul 29, 2025
Polysilicon removal in word line contact region of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12041771B2Jul 16, 2024
Polysilicon removal in word line contact region of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12543317B2Feb 3, 2026
Memory device with improved data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11653498B2May 16, 2023
Memory device with improved data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10283510B2May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9768182B2Sep 19, 2017
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711657B2Jul 18, 2017
Silicide process using OD spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727191B2Jul 28, 2020
Semiconductor device with post passivation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535670B2Jan 14, 2020
Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9735049B2Aug 15, 2017
Method for fabricating semiconductor structure with passivation sidewall block
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9899395B1Feb 20, 2018
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42