P

Inventor

LIN CHI-YEN

TW39 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHI-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

20 patents
US10163831B2Dec 25, 2018

Semiconductor device with post passivation structure and fabrication method therefor

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10748911B2Aug 18, 2020

Integrated circuit for low power SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US9735252B2Aug 15, 2017

V-shaped SiGe recess volume trim for improved device performance and layout dependence

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9722082B2Aug 1, 2017

Methods and apparatus for doped SiGe source/drain stressor deposition

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9385215B2Jul 5, 2016

V-shaped SiGe recess volume trim for improved device performance and layout dependence

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10734489B2Aug 4, 2020

Method for forming semiconductor device structure with metal silicide layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9196545B2Nov 24, 2015

SiGe SRAM butted contact resistance improvement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12381166B2Aug 5, 2025

Method of making semiconductor structure including buffer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12183793B2Dec 31, 2024

Method for forming semiconductor device structure with metal-semiconductor compound layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12052851B2Jul 30, 2024

Integrated circuit structure for low power SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11810879B2Nov 7, 2023

Semiconductor structure including buffer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11462550B2Oct 4, 2022

SRAM structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11309268B2Apr 19, 2022

Method of designing a layout, method of making a semiconductor structure and semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11101354B2Aug 24, 2021

Method for forming semiconductor device structure with metal silicide layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12543317B2Feb 3, 2026

Memory device with improved data retention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11653498B2May 16, 2023

Memory device with improved data retention

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US9337126B2May 10, 2016

Integrated circuit and fabricating method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations57
US10158004B2Dec 18, 2018

Source/drain recess volume trim for improved device performance and layout dependence

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9831314B2Nov 28, 2017

Surface profile for semiconductor region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727191B2Jul 28, 2020

Semiconductor device with post passivation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

HUANG JIUN-JIE

5 patents

TAIWAN SEMICONDUCTOR MFG

4 patents

CHEN CHAO-HSUING

3 patents

DAXIN MATERIALS CORP

3 patents

TSAI MING-HAN

1 patent

JIUN-JIE HUANG

1 patent

DAXIN MAT CORP

1 patent

ADVANCED LITHIUM ELECTROCHEMISTRY CO LTD

1 patent