Inventor
LIN CHI-YEN
TW39 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHI-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS10163831B2Dec 25, 2018
Semiconductor device with post passivation structure and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10748911B2Aug 18, 2020
Integrated circuit for low power SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US9735252B2Aug 15, 2017
V-shaped SiGe recess volume trim for improved device performance and layout dependence
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9722082B2Aug 1, 2017
Methods and apparatus for doped SiGe source/drain stressor deposition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9385215B2Jul 5, 2016
V-shaped SiGe recess volume trim for improved device performance and layout dependence
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10734489B2Aug 4, 2020
Method for forming semiconductor device structure with metal silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9196545B2Nov 24, 2015
SiGe SRAM butted contact resistance improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12381166B2Aug 5, 2025
Method of making semiconductor structure including buffer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12183793B2Dec 31, 2024
Method for forming semiconductor device structure with metal-semiconductor compound layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12052851B2Jul 30, 2024
Integrated circuit structure for low power SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11810879B2Nov 7, 2023
Semiconductor structure including buffer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11462550B2Oct 4, 2022
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11309268B2Apr 19, 2022
Method of designing a layout, method of making a semiconductor structure and semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11101354B2Aug 24, 2021
Method for forming semiconductor device structure with metal silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12543317B2Feb 3, 2026
Memory device with improved data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11653498B2May 16, 2023
Memory device with improved data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US9337126B2May 10, 2016
Integrated circuit and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations57
US10158004B2Dec 18, 2018
Source/drain recess volume trim for improved device performance and layout dependence
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9831314B2Nov 28, 2017
Surface profile for semiconductor region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727191B2Jul 28, 2020
Semiconductor device with post passivation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
HUANG JIUN-JIE
5 patentsUS9064841B2Jun 23, 2015
Metal-oxide-metal capacitor apparatus with a via-hole region
HUANG JIUN-JIE4 citations71
US8558350B2Oct 15, 2013
Metal-oxide-metal capacitor structure
HUANG JIUN-JIE5 citations71
US8476629B2Jul 2, 2013
Enhanced wafer test line structure
HUANG JIUN-JIE0 citations50
US8468474B2Jun 18, 2013
Reducing metal pits through optical proximity correction
HUANG JIUN-JIE0 citations50
US8341562B1Dec 25, 2012
Reducing metal pits through optical proximity correction
HUANG JIUN-JIE0 citations50
TAIWAN SEMICONDUCTOR MFG
4 patentsUS9324836B2Apr 26, 2016
Methods and apparatus for doped SiGe source/drain stressor deposition
TAIWAN SEMICONDUCTOR MFG4 citations84
US8940594B2Jan 27, 2015
Semiconductor device having v-shaped region
TAIWAN SEMICONDUCTOR MFG4 citations73
US9269812B2Feb 23, 2016
Semiconductor device having V-shaped region
TAIWAN SEMICONDUCTOR MFG0 citations52
US9099421B2Aug 4, 2015
Surface profile for semiconductor region
TAIWAN SEMICONDUCTOR MFG0 citations52
CHEN CHAO-HSUING
3 patentsUS9142642B2Sep 22, 2015
Methods and apparatus for doped SiGe source/drain stressor deposition
CHEN CHAO-HSUING17 citations91
US8766256B2Jul 1, 2014
SiGe SRAM butted contact resistance improvement
CHEN CHAO-HSUING5 citations82
US9053974B2Jun 9, 2015
SRAM cells with dummy insertions
CHEN CHAO-HSUING0 citations50
DAXIN MATERIALS CORP
3 patentsUS10703945B2Jul 7, 2020
Method for temporary bonding workpiece and adhesive
DAXIN MATERIALS CORP2 citations68
US11794381B2Oct 24, 2023
Laser-debondable composition, laminate thereof, and laser-debonding method
DAXIN MATERIALS CORP0 citations55
US12043770B2Jul 23, 2024
Temporary bonding composition, temporary bonding film, composite film, temporary bonding method and semiconductor wafer package
DAXIN MATERIALS CORP0 citations44