Inventor
WU CHUNG-WEI
TW54 patents
⚠️ This page may combine multiple inventors who share the name “WU CHUNG-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
44 patentsUS11569348B2Jan 31, 2023
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11557659B2Jan 17, 2023
Gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US11489063B2Nov 1, 2022
Method of manufacturing a source/drain feature in a multi-gate semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11469332B2Oct 11, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11037925B2Jun 15, 2021
Structure and method of integrated circuit having decouple capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11768437B2Sep 26, 2023
System and method for performing extreme ultraviolet photolithography processes
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11392040B2Jul 19, 2022
System and method for performing extreme ultraviolet photolithography processes
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11264270B2Mar 1, 2022
Air-replaced spacer for self-aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11990522B2May 21, 2024
Effective work function tuning via silicide induced interface dipole modulation for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527622B2Dec 13, 2022
Effective work function tuning via silicide induced interface dipole modulation for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12218214B2Feb 4, 2025
Source/drain silicide for multigate device performance and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12550393B2Feb 10, 2026
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396240B2Aug 19, 2025
Source/drain silicide for multigate device performance and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349418B2Jul 1, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317526B2May 27, 2025
Multi-gate devices and fabricating the same with etch rate modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310029B2May 20, 2025
Semiconductor memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300749B2May 13, 2025
Source/drain features with improved strain properties
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237414B2Feb 25, 2025
Source/drain features with improved strain properties
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199170B2Jan 14, 2025
Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190931B2Jan 7, 2025
Semiconductor memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12174545B2Dec 24, 2024
System and method for performing extreme ultraviolet photolithography processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125848B2Oct 22, 2024
Semiconductor device structure incorporating air gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040222B2Jul 16, 2024
Air-replaced spacer for self-aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12034044B2Jul 9, 2024
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009408B2Jun 11, 2024
Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11949001B2Apr 2, 2024
Multi-gate devices and fabricating the same with etch rate modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929409B2Mar 12, 2024
Semiconductor device with improved source and drain contact area and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11756959B2Sep 12, 2023
Structure and method of integrated circuit having decouple capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11716857B2Aug 1, 2023
Semiconductor memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705177B2Jul 18, 2023
Semiconductor memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626400B2Apr 11, 2023
Semiconductor device structure incorporating air gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476342B1Oct 18, 2022
Semiconductor device with improved source and drain contact area and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11282943B2Mar 22, 2022
Multi-gate devices and fabricating the same with etch rate modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396235B2Aug 19, 2025
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12376309B2Jul 29, 2025
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12382691B2Aug 5, 2025
Effective work function tuning via silicide induced interface dipole modulation for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12568640B2Mar 3, 2026
Multi-gate devices with multi-layer inner spacers and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12501660B2Dec 16, 2025
Field effect transistor with merged epitaxy backside cut and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11908919B2Feb 20, 2024
Multi-gate devices with multi-layer inner spacers and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11855143B2Dec 26, 2023
Semiconductor structures and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12349380B2Jul 1, 2025
Gate all around transistor device and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12029042B2Jul 2, 2024
3D memory device with modulated doped channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11508807B2Nov 22, 2022
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12543322B2Feb 3, 2026
Ferroelectric memory device with carrier structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
ASUSTEK COMP INC
3 patentsLITE ON TECHNOLOGY CORP
2 patentsCHIUN MAI COMMUNICATION SYSTEMS INC
1 patentShowing the top 50 of 54 patents by PatentIndex Score.