Inventor
WONG SIU WAI
HK4 patents
Patents
4 patentsUS10777689B1Sep 15, 2020
Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate
HONG KONG APPLIED SCIENCE & TECH RESEARCH INST CO LTD22 citations88
US12310048B2May 20, 2025
Silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with short circuit protection
HONG KONG APPLIED SCIENCE & TECH RESEARCH INST CO LTD0 citations46
US10916626B2Feb 9, 2021
High voltage power device with hybrid Schottky trenches and method of fabricating the same
HONG KONG APPLIED SCIENCE & TECH RESEARCH INST CO LTD0 citations46
US10615292B2Apr 7, 2020
High voltage silicon carbide Schottky diode flip chip array
HONG KONG APPLIED SCIENCE & TECH RESEARCH INST CO LTD0 citations36