P

Inventor

BYUN JINDO

KR18 patents

Patents

18 patents
US11115021B2Sep 7, 2021

Impedance calibration circuit and memory device including the same

SAMSUNG ELECTRONICS CO LTD5 citations82
US11587598B2Feb 21, 2023

Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US11789879B2Oct 17, 2023

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD1 citations72
US11693030B2Jul 4, 2023

Probe device, test device, and test method for semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US11669448B2Jun 6, 2023

Transmitters for generating multi-level signals and memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11657860B2May 23, 2023

Memory package and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11461251B2Oct 4, 2022

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11615833B2Mar 28, 2023

Multi-level signal receivers and memory systems including the same

SAMSUNG ELECTRONICS CO LTD3 citations70
US12321290B2Jun 3, 2025

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12061561B2Aug 13, 2024

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11804838B2Oct 31, 2023

Transmitter circuit including selection circuit, and method of operating the selection circuit

SAMSUNG ELECTRONICS CO LTD1 citations62
US11502687B2Nov 15, 2022

Impedance calibration circuit and memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12368443B2Jul 22, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US11914416B2Feb 27, 2024

Transmitter circuit and method of operating same

SAMSUNG ELECTRONICS CO LTD0 citations51
US11522261B2Dec 6, 2022

Multi-mode transmission line and storage device including the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12488816B2Dec 2, 2025

Transmitter, memory device and semiconductor device including the transmitter

SAMSUNG ELECTRONICS CO LTD0 citations50
US12444460B2Oct 14, 2025

Memory device, electronic device, and operation method of memory device

SAMSUNG ELECTRONICS CO LTD0 citations50
US11521672B2Dec 6, 2022

Semiconductor device and memory system

SAMSUNG ELECTRONICS CO LTD0 citations48