Inventor
BIYAJIMA YUSUKE
JP27 patents
⚠️ This page may combine multiple inventors who share the name “BIYAJIMA YUSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU CHEMICAL CO
23 patentsUS9207535B2Dec 8, 2015
Method for producing resist composition
SHINETSU CHEMICAL CO7 citations84
US11385544B2Jul 12, 2022
Composition for forming silicon-containing resist underlayer film and patterning process
SHINETSU CHEMICAL CO4 citations72
US9312127B2Apr 12, 2016
Method for producing semiconductor apparatus substrate
SHINETSU CHEMICAL CO4 citations72
US12147160B2Nov 19, 2024
Resist underlayer film material, patterning process, and method for forming resist underlayer film
SHINETSU CHEMICAL CO1 citations62
US11480879B2Oct 25, 2022
Composition for forming silicon-containing resist underlayer film and patterning process
SHINETSU CHEMICAL CO1 citations62
US11018015B2May 25, 2021
Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process
SHINETSU CHEMICAL CO1 citations62
US12332565B2Jun 17, 2025
Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process
SHINETSU CHEMICAL CO0 citations61
US12174541B2Dec 24, 2024
Composition for forming silicon-containing resist underlayer film and patterning process
SHINETSU CHEMICAL CO0 citations61
US12085857B2Sep 10, 2024
Composition for forming silicon-containing resist underlayer film and patterning process
SHINETSU CHEMICAL CO0 citations61
US12001138B2Jun 4, 2024
Composition for forming silicon-containing resist underlayer film and patterning process
SHINETSU CHEMICAL CO0 citations61
US11914295B2Feb 27, 2024
Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process
SHINETSU CHEMICAL CO0 citations61
US12351742B2Jul 8, 2025
Material for forming adhesive film, patterning process, and method for forming adhesive film
SHINETSU CHEMICAL CO0 citations58
US11592287B2Feb 28, 2023
Method for measuring distance of diffusion of curing catalyst
SHINETSU CHEMICAL CO0 citations52
US9052603B2Jun 9, 2015
Pattern forming process
SHINETSU CHEMICAL CO0 citations52
US12498639B2Dec 16, 2025
Material for forming adhesive film, method for forming adhesive film using the same, and patterning process using material for forming adhesive film
SHINETSU CHEMICAL CO0 citations51
US12215221B2Feb 4, 2025
Material for forming organic film, method for forming organic film, patterning process, and compound
SHINETSU CHEMICAL CO0 citations51
US12013640B2Jun 18, 2024
Resist underlayer film material, patterning process, and method for forming resist underlayer film
SHINETSU CHEMICAL CO0 citations51
US11822247B2Nov 21, 2023
Material for forming organic film, method for forming organic film, patterning process, and compound
SHINETSU CHEMICAL CO0 citations51
US11720023B2Aug 8, 2023
Material for forming organic film, method for forming organic film, patterning process, and compound
SHINETSU CHEMICAL CO0 citations51
US9201301B2Dec 1, 2015
Method for producing resist composition
SHINETSU CHEMICAL CO1 citations51
US10620537B2Apr 14, 2020
Resist underlayer film composition, patterning process, method for forming resist underlayer film, and compound for resist underlayer film composition
SHINETSU CHEMICAL CO0 citations41
US10610906B2Apr 7, 2020
Method for manufacturing a resist composition
SHINETSU CHEMICAL CO0 citations41
US9312144B2Apr 12, 2016
Composition for forming a silicon-containing resist under layer film and patterning process
SHINETSU CHEMICAL CO0 citations41
OGIHARA TSUTOMU
4 patentsUS8663898B2Mar 4, 2014
Resist underlayer film composition and patterning process using the same
OGIHARA TSUTOMU7 citations84
US8853031B2Oct 7, 2014
Resist underlayer film composition and patterning process using the same
OGIHARA TSUTOMU5 citations73
US8877422B2Nov 4, 2014
Resist underlayer film composition and patterning process using the same
OGIHARA TSUTOMU3 citations63
US8592956B2Nov 26, 2013
Resist underlayer film composition and patterning process using the same
OGIHARA TSUTOMU2 citations63