P

Inventor

BIYAJIMA YUSUKE

JP27 patents
⚠️ This page may combine multiple inventors who share the name “BIYAJIMA YUSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINETSU CHEMICAL CO

23 patents
US9207535B2Dec 8, 2015

Method for producing resist composition

SHINETSU CHEMICAL CO7 citations84
US11385544B2Jul 12, 2022

Composition for forming silicon-containing resist underlayer film and patterning process

SHINETSU CHEMICAL CO4 citations72
US9312127B2Apr 12, 2016

Method for producing semiconductor apparatus substrate

SHINETSU CHEMICAL CO4 citations72
US12147160B2Nov 19, 2024

Resist underlayer film material, patterning process, and method for forming resist underlayer film

SHINETSU CHEMICAL CO1 citations62
US11480879B2Oct 25, 2022

Composition for forming silicon-containing resist underlayer film and patterning process

SHINETSU CHEMICAL CO1 citations62
US11018015B2May 25, 2021

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

SHINETSU CHEMICAL CO1 citations62
US12332565B2Jun 17, 2025

Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

SHINETSU CHEMICAL CO0 citations61
US12174541B2Dec 24, 2024

Composition for forming silicon-containing resist underlayer film and patterning process

SHINETSU CHEMICAL CO0 citations61
US12085857B2Sep 10, 2024

Composition for forming silicon-containing resist underlayer film and patterning process

SHINETSU CHEMICAL CO0 citations61
US12001138B2Jun 4, 2024

Composition for forming silicon-containing resist underlayer film and patterning process

SHINETSU CHEMICAL CO0 citations61
US11914295B2Feb 27, 2024

Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

SHINETSU CHEMICAL CO0 citations61
US12351742B2Jul 8, 2025

Material for forming adhesive film, patterning process, and method for forming adhesive film

SHINETSU CHEMICAL CO0 citations58
US11592287B2Feb 28, 2023

Method for measuring distance of diffusion of curing catalyst

SHINETSU CHEMICAL CO0 citations52
US9052603B2Jun 9, 2015

Pattern forming process

SHINETSU CHEMICAL CO0 citations52
US12498639B2Dec 16, 2025

Material for forming adhesive film, method for forming adhesive film using the same, and patterning process using material for forming adhesive film

SHINETSU CHEMICAL CO0 citations51
US12215221B2Feb 4, 2025

Material for forming organic film, method for forming organic film, patterning process, and compound

SHINETSU CHEMICAL CO0 citations51
US12013640B2Jun 18, 2024

Resist underlayer film material, patterning process, and method for forming resist underlayer film

SHINETSU CHEMICAL CO0 citations51
US11822247B2Nov 21, 2023

Material for forming organic film, method for forming organic film, patterning process, and compound

SHINETSU CHEMICAL CO0 citations51
US11720023B2Aug 8, 2023

Material for forming organic film, method for forming organic film, patterning process, and compound

SHINETSU CHEMICAL CO0 citations51
US9201301B2Dec 1, 2015

Method for producing resist composition

SHINETSU CHEMICAL CO1 citations51
US10620537B2Apr 14, 2020

Resist underlayer film composition, patterning process, method for forming resist underlayer film, and compound for resist underlayer film composition

SHINETSU CHEMICAL CO0 citations41
US10610906B2Apr 7, 2020

Method for manufacturing a resist composition

SHINETSU CHEMICAL CO0 citations41
US9312144B2Apr 12, 2016

Composition for forming a silicon-containing resist under layer film and patterning process

SHINETSU CHEMICAL CO0 citations41

OGIHARA TSUTOMU

4 patents