Inventor
CHO HYUN JIN
KR95 patents
⚠️ This page may combine multiple inventors who share the name “CHO HYUN JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG DISPLAY CO LTD
12 patentsUS10043860B2Aug 7, 2018
Display device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD2 citations72
US12501013B2Dec 16, 2025
Display device and a method of driving the same
SAMSUNG DISPLAY CO LTD0 citations63
US11910640B2Feb 20, 2024
Display device and manufacturing method thereof
SAMSUNG DISPLAY CO LTD0 citations63
US11758113B2Sep 12, 2023
Display device
SAMSUNG DISPLAY CO LTD0 citations63
US12413702B2Sep 9, 2025
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US12038585B2Jul 16, 2024
Optical device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD0 citations62
US11586042B2Feb 21, 2023
Optical device
SAMSUNG DISPLAY CO LTD1 citations62
US11579476B2Feb 14, 2023
Display device comprising a display panel having a Lambertian light emission distribution and a viewing angle modulator including a diffraction structure
SAMSUNG DISPLAY CO LTD0 citations62
US11467404B2Oct 11, 2022
Optical device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD0 citations62
US11086130B2Aug 10, 2021
Optical device
SAMSUNG DISPLAY CO LTD1 citations62
US11067819B2Jul 20, 2021
Optical device and method of driving the same
SAMSUNG DISPLAY CO LTD0 citations62
US10910605B2Feb 2, 2021
Display device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD1 citations62
T RAM INC
9 patentsUS6653175B1Nov 25, 2003
Stability in thyristor-based memory device
T RAM INC197 citations99
US6653174B1Nov 25, 2003
Thyristor-based device over substrate surface
T RAM INC115 citations99
US6462359B1Oct 8, 2002
Stability in thyristor-based memory device
T RAM INC140 citations99
US6885581B2Apr 26, 2005
Dynamic data restore in thyristor-based memory device
T RAM INC272 citations98
US6727528B1Apr 27, 2004
Thyristor-based device including trench dielectric isolation for thyristor-body regions
T RAM INC39 citations96
US6891205B1May 10, 2005
Stability in thyristor-based memory device
T RAM INC29 citations93
US6690038B1Feb 10, 2004
Thyristor-based device over substrate surface
T RAM INC40 citations93
US6583452B1Jun 24, 2003
Thyristor-based device having extended capacitive coupling
T RAM INC25 citations93
US6777271B1Aug 17, 2004
Thyristor-based device including trench isolation
T RAM INC12 citations74
T RAM SEMICONDUCTOR INC
9 patentsUS7460395B1Dec 2, 2008
Thyristor-based semiconductor memory and memory array with data refresh
T RAM SEMICONDUCTOR INC46 citations96
US7786505B1Aug 31, 2010
Reduction of charge leakage from a thyristor-based memory cell
T RAM SEMICONDUCTOR INC48 citations94
US7969777B1Jun 28, 2011
Thyristor-based memory array having lines with standby voltages
T RAM SEMICONDUCTOR INC22 citations93
US7042759B2May 9, 2006
Dynamic data restore in thyristor-based memory device
T RAM SEMICONDUCTOR INC18 citations92
US7491586B2Feb 17, 2009
Semiconductor device with leakage implant and method of fabrication
T RAM SEMICONDUCTOR INC9 citations84
US7075122B1Jul 11, 2006
Thyristor device with carbon lifetime adjustment implant and its method of fabrication
T RAM SEMICONDUCTOR INC13 citations84
US7405963B2Jul 29, 2008
Dynamic data restore in thyristor-based memory device
T RAM SEMICONDUCTOR INC6 citations73
US7858449B2Dec 28, 2010
Thyristor device with carbon lifetime adjustment implant and its method of fabrication
T RAM SEMICONDUCTOR INC2 citations63
US7488626B1Feb 10, 2009
Thyristor device with carbon lifetime adjustment implant and its method of fabrication
T RAM SEMICONDUCTOR INC3 citations63
IBM
7 patentsUS9564440B2Feb 7, 2017
Spacer chamfering gate stack scheme
IBM9 citations84
US9105559B2Aug 11, 2015
Conformal doping for FinFET devices
IBM13 citations83
US10586855B2Mar 10, 2020
Spacer chamfering gate stack scheme
IBM1 citations73
US9853117B2Dec 26, 2017
Spacer chamfering gate stack scheme
IBM2 citations73
US10002940B2Jun 19, 2018
Spacer chamfering gate stack scheme
IBM1 citations63
US9646969B2May 9, 2017
Spacer chamfering gate stack scheme
IBM1 citations63
US9613958B2Apr 4, 2017
Spacer chamfering gate stack scheme
IBM1 citations63
GLOBALFOUNDRIES INC
3 patentsUS9190260B1Nov 17, 2015
Topological method to build self-aligned MTJ without a mask
GLOBALFOUNDRIES INC39 citations94
US9129986B2Sep 8, 2015
Spacer chamfering for a replacement metal gate device
GLOBALFOUNDRIES INC13 citations84
US9691971B2Jun 27, 2017
Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same
GLOBALFOUNDRIES INC5 citations72
ADVANCED MICRO DEVICES INC
3 patentsUS7504286B2Mar 17, 2009
Semiconductor memory devices and methods for fabricating the same
ADVANCED MICRO DEVICES INC14 citations84
US7940560B2May 10, 2011
Memory cells, memory devices and integrated circuits incorporating the same
ADVANCED MICRO DEVICES INC2 citations63
US7679955B2Mar 16, 2010
Semiconductor switching device
ADVANCED MICRO DEVICES INC2 citations63
SAMSUNG ELECTRONICS CO LTD
2 patentsEOM YOUNG-IK
2 patentsUS8261010B2Sep 4, 2012
Methods for distributing log block associativity for real-time system and flash memory devices performing the same
EOM YOUNG-IK18 citations83
US8819790B2Aug 26, 2014
Cooperation method and system between send mechanism and IPSec protocol in IPV6 environment
EOM YOUNG-IK4 citations70
UNIV STANFORD
1 patentCHEONG BYOUNG-HO
1 patentEOM YOUNG IK
1 patentShowing the top 50 of 95 patents by PatentIndex Score.