Inventor
PLUMTON DONALD L
US31 patents
⚠️ This page may combine multiple inventors who share the name “PLUMTON DONALD L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
27 patentsUS6097046AAug 1, 2000
Vertical field effect transistor and diode
TEXAS INSTRUMENTS INC246 citations99
US5747842AMay 5, 1998
Epitaxial overgrowth method and devices
TEXAS INSTRUMENTS INC98 citations98
US5624860AApr 29, 1997
Vertical field effect transistor and method
TEXAS INSTRUMENTS INC102 citations98
US5610085AMar 11, 1997
Method of making a vertical FET using epitaxial overgrowth
TEXAS INSTRUMENTS INC145 citations98
US5554561ASep 10, 1996
Epitaxial overgrowth method
TEXAS INSTRUMENTS INC103 citations98
US5468661ANov 21, 1995
Method of making power VFET device
TEXAS INSTRUMENTS INC88 citations96
US5391515AFeb 21, 1995
Capped anneal
TEXAS INSTRUMENTS INC63 citations96
US5369042ANov 29, 1994
Enhanced performance bipolar transistor process
TEXAS INSTRUMENTS INC74 citations96
US5342795AAug 30, 1994
Method of fabricating power VFET gate-refill
TEXAS INSTRUMENTS INC81 citations96
US5243207ASep 7, 1993
Method to integrate HBTs and FETs
TEXAS INSTRUMENTS INC68 citations96
US5231037AJul 27, 1993
Method of making a power VFET device using a p+ carbon doped gate layer
TEXAS INSTRUMENTS INC105 citations96
US5068756ANov 26, 1991
Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
TEXAS INSTRUMENTS INC110 citations96
US5548141AAug 20, 1996
Bipolar transistor having a self emitter contact aligned
TEXAS INSTRUMENTS INC23 citations92
US5077231ADec 31, 1991
Method to integrate HBTs and FETs
TEXAS INSTRUMENTS INC50 citations92
US4843033AJun 27, 1989
Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source
TEXAS INSTRUMENTS INC28 citations92
US4743569AMay 10, 1988
Two step rapid thermal anneal of implanted compound semiconductor
TEXAS INSTRUMENTS INC31 citations92
US5744375AApr 28, 1998
Capped anneal
TEXAS INSTRUMENTS INC14 citations82
US5659188AAug 19, 1997
Capped anneal
TEXAS INSTRUMENTS INC15 citations82
US5436181AJul 25, 1995
Method of self aligning an emitter contact in a heterojunction bipolar transistor
TEXAS INSTRUMENTS INC8 citations74
US5474652ADec 12, 1995
Method of dry etching InAlAs and InGaAs lattice matched to InP
TEXAS INSTRUMENTS INC5 citations73
US5013682AMay 7, 1991
Method for selective epitaxy using a WSI mask
TEXAS INSTRUMENTS INC10 citations73
US4868633ASep 19, 1989
Selective epitaxy devices and method
TEXAS INSTRUMENTS INC16 citations73
US5420052AMay 30, 1995
Method of fabricating a semiplanar heterojunction bipolar transistor
TEXAS INSTRUMENTS INC4 citations63
US5616213AApr 1, 1997
Method of dry etching InAlAs and InGaAs lattice matched to InP
TEXAS INSTRUMENTS INC2 citations62
US5362657ANov 8, 1994
Lateral complementary heterojunction bipolar transistor and processing procedure
TEXAS INSTRUMENTS INC6 citations57
US6271078B1Aug 7, 2001
Simplifying conductive plate/via isolation
TEXAS INSTRUMENTS INC0 citations52
US5698460ADec 16, 1997
Method of self-aligning an emitter contact in a planar heterojunction bipolar transistor and apparatus thereof
TEXAS INSTRUMENTS INC1 citations52