Inventor
SASAKI KOHEI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “SASAKI KOHEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAMURA SEISAKUSHO KK
25 patentsUS10249767B2Apr 2, 2019
Ga2O3-based semiconductor element
TAMURA SEISAKUSHO KK9 citations83
US11355594B2Jun 7, 2022
Diode
TAMURA SEISAKUSHO KK4 citations73
US10161058B2Dec 25, 2018
Ga2O3-based single crystal substrate, and production method therefor
TAMURA SEISAKUSHO KK2 citations73
US10861945B2Dec 8, 2020
Semiconductor element and crystalline laminate structure
TAMURA SEISAKUSHO KK2 citations72
US10230007B2Mar 12, 2019
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
TAMURA SEISAKUSHO KK4 citations72
US9245749B2Jan 26, 2016
Method of forming Ga2O3-based crystal film and crystal multilayer structure
TAMURA SEISAKUSHO KK5 citations72
US10358742B2Jul 23, 2019
Ga2O3-based crystal film, and crystal multilayer structure
TAMURA SEISAKUSHO KK2 citations71
US12482729B2Nov 25, 2025
Semiconductor device
TAMURA SEISAKUSHO KK0 citations62
US12104276B2Oct 1, 2024
Ga2O3-based single crystal substrate
TAMURA SEISAKUSHO KK0 citations62
US12087856B2Sep 10, 2024
Field effect transistor
TAMURA SEISAKUSHO KK0 citations62
US11616138B2Mar 28, 2023
Field effect transistor
TAMURA SEISAKUSHO KK0 citations62
US11081598B2Aug 3, 2021
Trench MOS Schottky diode
TAMURA SEISAKUSHO KK1 citations62
US10199512B2Feb 5, 2019
High voltage withstand Ga2O3-based single crystal schottky barrier diode
TAMURA SEISAKUSHO KK1 citations62
US11264241B2Mar 1, 2022
Semiconductor substrate, semiconductor element and method for producing semiconductor substrate
TAMURA SEISAKUSHO KK0 citations60
US11923464B2Mar 5, 2024
Schottky barrier diode
TAMURA SEISAKUSHO KK0 citations54
US11043602B2Jun 22, 2021
Schottky barrier diode
TAMURA SEISAKUSHO KK1 citations54
US11982016B2May 14, 2024
Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure
TAMURA SEISAKUSHO KK0 citations52
US10633761B2Apr 28, 2020
GA2O3-based single crystal substrate, and production method therefor
TAMURA SEISAKUSHO KK0 citations52
US9685515B2Jun 20, 2017
Substrate for epitaxial growth, and crystal laminate structure
TAMURA SEISAKUSHO KK1 citations52
US9657410B2May 23, 2017
Method for producing Ga2O3 based crystal film
TAMURA SEISAKUSHO KK0 citations52
US9202876B2Dec 1, 2015
Method for controlling concentration of donor in GA2O3-based single crystal
TAMURA SEISAKUSHO KK0 citations52
US11456388B2Sep 27, 2022
Trench MOS schottky diode and method for producing same
TAMURA SEISAKUSHO KK0 citations51
US10825935B2Nov 3, 2020
Trench MOS-type Schottky diode
TAMURA SEISAKUSHO KK0 citations51
US9611567B2Apr 4, 2017
Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact
TAMURA SEISAKUSHO KK0 citations51
US12230500B2Feb 18, 2025
Method of manufacturing a beta-Ga2O3-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas
TAMURA SEISAKUSHO KK0 citations46
SASAKI KOHEI
5 patentsUS9461124B2Oct 4, 2016
Ga2O3 semiconductor element
SASAKI KOHEI15 citations82
US9437689B2Sep 6, 2016
Ga2O3 semiconductor element
SASAKI KOHEI10 citations82
US9716004B2Jul 25, 2017
Crystal laminate structure and method for producing same
SASAKI KOHEI6 citations72
US9142623B2Sep 22, 2015
Substrate for epitaxial growth, and crystal laminate structure
SASAKI KOHEI4 citations72
US8951897B2Feb 10, 2015
Method for controlling concentration of donor in GA2O3—based single crystal
SASAKI KOHEI0 citations51