Inventor
CHONG KYU-WHAN
KR3 patents
Patents
3 patentsUS6924529B2Aug 2, 2005
MOS transistor having a recessed gate electrode and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD13 citations81
US5959928ASep 28, 1999
Integrated circuit memory devices including unidirectionally-oriented sub-blocks
SAMSUNG ELECTRONICS CO LTD8 citations61
US7550352B2Jun 23, 2009
MOS transistor having a recessed gate electrode and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD3 citations60