Inventor
SINGH GULBAGH
TW50 patents
Patents
50 patentsUS11335638B2May 17, 2022
Reducing RC delay in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10790391B2Sep 29, 2020
Source/drain epitaxial layer profile
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10546937B2Jan 28, 2020
Structures and methods for noise isolation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10163831B2Dec 25, 2018
Semiconductor device with post passivation structure and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10748911B2Aug 18, 2020
Integrated circuit for low power SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US12027581B2Jul 2, 2024
Semiconductor device with air-void in spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11942547B2Mar 26, 2024
Source/drain epitaxial layer profile
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11817345B2Nov 14, 2023
Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11804439B2Oct 31, 2023
Reducing RC delay in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11462642B2Oct 4, 2022
Source/drain epitaxial layer profile
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404537B2Aug 2, 2022
Semiconductor device with air-void in spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11367778B2Jun 21, 2022
MOSFET device structure with air-gaps in spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11211283B2Dec 28, 2021
Method for forming a bulk semiconductor substrate configured to exhibit soi behavior
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10886165B2Jan 5, 2021
Method of forming negatively sloped isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10672795B2Jun 2, 2020
Bulk semiconductor substrate configured to exhibit semiconductor-on-insulator behavior
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11887987B2Jan 30, 2024
Semiconductor wafer with devices having different top layer thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11417749B2Aug 16, 2022
Semiconductor arrangement with airgap and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10734489B2Aug 4, 2020
Method for forming semiconductor device structure with metal silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12557346B2Feb 17, 2026
Source/drain epitaxial layer profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12446289B2Oct 14, 2025
MOSFET device structure with air-gaps in spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230574B2Feb 18, 2025
Reducing RC delay in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211934B2Jan 28, 2025
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199181B2Jan 14, 2025
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191196B2Jan 7, 2025
Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935895B2Mar 19, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11855170B2Dec 26, 2023
MOSFET device structure with air-gaps in spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476157B2Oct 18, 2022
Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance due to reduction of off-state capacitance of back-end-of-line (BEOL) features of the MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11398403B2Jul 26, 2022
Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264456B2Mar 1, 2022
Isolation regions for reduced junction leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11183570B2Nov 23, 2021
Structures and methods for noise isolation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11145539B2Oct 12, 2021
Shallow trench isolation for integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402389B2Aug 26, 2025
Semiconductor arrangement with airgap and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12381166B2Aug 5, 2025
Method of making semiconductor structure including buffer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302637B2May 13, 2025
Semiconductor wafer with devices having different top layer thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12183793B2Dec 31, 2024
Method for forming semiconductor device structure with metal-semiconductor compound layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12052851B2Jul 30, 2024
Integrated circuit structure for low power SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11810879B2Nov 7, 2023
Semiconductor structure including buffer layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11462550B2Oct 4, 2022
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11348944B2May 31, 2022
Semiconductor wafer with devices having different top layer thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11309268B2Apr 19, 2022
Method of designing a layout, method of making a semiconductor structure and semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11101354B2Aug 24, 2021
Method for forming semiconductor device structure with metal silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11855137B2Dec 26, 2023
SOI device structure for robust isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11257902B2Feb 22, 2022
SOI device structure for robust isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12543317B2Feb 3, 2026
Memory device with improved data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11653498B2May 16, 2023
Memory device with improved data retention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12557307B2Feb 17, 2026
Metal-insulator-metal (MIM) capacitor with a top electrode having an oxygen-enriched portion
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10636870B2Apr 28, 2020
Isolation regions for reduced junction leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10636695B2Apr 28, 2020
Negatively sloped isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522390B1Dec 31, 2019
Shallow trench isolation for integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727191B2Jul 28, 2020
Semiconductor device with post passivation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51