Inventor
LIN HUNG-SUI
TW19 patents
⚠️ This page may combine multiple inventors who share the name “LIN HUNG-SUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
16 patentsUS6498377B1Dec 24, 2002
SONOS component having high dielectric property
MACRONIX INT CO LTD107 citations97
US6524913B1Feb 25, 2003
Method of fabricating a non-volatile memory with a spacer
MACRONIX INT CO LTD74 citations96
US6720614B2Apr 13, 2004
Operation method for programming and erasing a data in a P-channel sonos memory cell
MACRONIX INT CO LTD31 citations92
US6671209B2Dec 30, 2003
Erasing method for p-channel NROM
MACRONIX INT CO LTD28 citations92
US6635946B2Oct 21, 2003
Semiconductor device with trench isolation structure
MACRONIX INT CO LTD15 citations84
US6455388B1Sep 24, 2002
Method of manufacturing metal-oxide semiconductor transistor
MACRONIX INT CO LTD16 citations84
US6620693B2Sep 16, 2003
Non-volatile memory and fabrication thereof
MACRONIX INT CO LTD10 citations73
US6555844B1Apr 29, 2003
Semiconductor device with minimal short-channel effects and low bit-line resistance
MACRONIX INT CO LTD7 citations73
US6458643B1Oct 1, 2002
Method of fabricating a MOS device with an ultra-shallow junction
MACRONIX INT CO LTD7 citations73
US6812099B2Nov 2, 2004
Method for fabricating non-volatile memory having P-type floating gate
MACRONIX INT CO LTD6 citations62
US6808995B2Oct 26, 2004
Semiconductor device with minimal short-channel effects and low bit-line resistance
MACRONIX INT CO LTD4 citations62
US6524919B2Feb 25, 2003
Method for manufacturing a metal oxide semiconductor with a sharp corner spacer
MACRONIX INT CO LTD5 citations62
US6514807B1Feb 4, 2003
Method for fabricating semiconductor device applied system on chip
MACRONIX INT CO LTD4 citations62
US6482709B1Nov 19, 2002
Manufacturing process of a MOS transistor
MACRONIX INT CO LTD6 citations62
US6448142B1Sep 10, 2002
Method for fabricating a metal oxide semiconductor transistor
MACRONIX INT CO LTD5 citations62
US6492235B2Dec 10, 2002
Method for forming extension by using double etch spacer
MACRONIX INT CO LTD0 citations52