Inventor
KI WON-TAI
KR10 patents
Patents
10 patentsUS6291119B2Sep 18, 2001
Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography and recording medium in which the method is recorded
SAMSUNG ELECTRONICS CO LTD76 citations94
US7129024B2Oct 31, 2006
Electron beam lithography method
SAMSUNG ELECTRONICS CO LTD36 citations91
US6475684B2Nov 5, 2002
Method of correcting line width variation due to loading effect caused during etching of a photomask and recording medium formed according to the method
SAMSUNG ELECTRONICS CO LTD20 citations91
US6835507B2Dec 28, 2004
Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare
SAMSUNG ELECTRONICS CO LTD19 citations82
US6775815B2Aug 10, 2004
Exposure method for correcting line width variation in a photomask
SAMSUNG ELECTRONICS CO LTD14 citations82
US7185312B2Feb 27, 2007
Exposure method for correcting line width variation in a photomask
SAMSUNG ELECTRONICS CO LTD2 citations61
US7393615B2Jul 1, 2008
Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare
SAMSUNG ELECTRONICS CO LTD2 citations60
US7065735B2Jun 20, 2006
Method for making an OPC mask and an OPC mask manufactured using the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US6689520B2Feb 10, 2004
Exposure method for correcting dimension variation in electron beam lithography
SAMSUNG ELECTRONICS CO LTD1 citations50
US6617084B2Sep 9, 2003
Electron beam mask having dummy stripe(s) and lithographic method of manufacturing a semiconductor device using an E-beam mask having at least one defective pattern
SAMSUNG ELECTRONICS CO LTD1 citations50