Inventor
CURRIE MATTHEW
US14 patents
⚠️ This page may combine multiple inventors who share the name “CURRIE MATTHEW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AMBERWAVE SYSTEMS CORP
11 patentsUS6583015B2Jun 24, 2003
Gate technology for strained surface channel and strained buried channel MOSFET devices
AMBERWAVE SYSTEMS CORP152 citations99
US6900094B2May 31, 2005
Method of selective removal of SiGe alloys
AMBERWAVE SYSTEMS CORP130 citations98
US6831292B2Dec 14, 2004
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
AMBERWAVE SYSTEMS CORP361 citations98
US7049627B2May 23, 2006
Semiconductor heterostructures and related methods
AMBERWAVE SYSTEMS CORP102 citations97
US6933518B2Aug 23, 2005
RF circuits including transistors having strained material layers
AMBERWAVE SYSTEMS CORP20 citations92
US6846715B2Jan 25, 2005
Gate technology for strained surface channel and strained buried channel MOSFET devices
AMBERWAVE SYSTEMS CORP17 citations92
US7375385B2May 20, 2008
Semiconductor heterostructures having reduced dislocation pile-ups
AMBERWAVE SYSTEMS CORP9 citations91
US7060632B2Jun 13, 2006
Methods for fabricating strained layers on semiconductor substrates
AMBERWAVE SYSTEMS CORP27 citations91
US7217668B2May 15, 2007
Gate technology for strained surface channel and strained buried channel MOSFET devices
AMBERWAVE SYSTEMS CORP2 citations63
US7259108B2Aug 21, 2007
Methods for fabricating strained layers on semiconductor substrates
AMBERWAVE SYSTEMS CORP2 citations61
US7368308B2May 6, 2008
Methods of fabricating semiconductor heterostructures
AMBERWAVE SYSTEMS CORP0 citations51
TAIWAN SEMICONDUCTOR MFG
3 patentsUS7709828B2May 4, 2010
RF circuits including transistors having strained material layers
TAIWAN SEMICONDUCTOR MFG138 citations98
US7884353B2Feb 8, 2011
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
TAIWAN SEMICONDUCTOR MFG9 citations92
US7906776B2Mar 15, 2011
RF circuits including transistors having strained material layers
TAIWAN SEMICONDUCTOR MFG2 citations62