Inventor
LIOU TSYR-SHYANG
TW14 patents
⚠️ This page may combine multiple inventors who share the name “LIOU TSYR-SHYANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RICHWAVE TECHNOLOGY CORP
8 patentsUS7205844B2Apr 17, 2007
Low noise and high gain low noise amplifier
RICHWAVE TECHNOLOGY CORP23 citations91
US7193475B2Mar 20, 2007
Single-ended input to differential output low noise amplifier with a cascode topology
RICHWAVE TECHNOLOGY CORP35 citations91
US7375590B2May 20, 2008
Single-ended input to differential-ended output low noise amplifier implemented with cascode and cascade topology
RICHWAVE TECHNOLOGY CORP7 citations69
US11646712B2May 9, 2023
Bulk acoustic wave structure and bulk acoustic wave device
RICHWAVE TECHNOLOGY CORP0 citations61
US11362637B2Jun 14, 2022
Bulk acoustic wave structure, bulk acoustic wave device, and manufacturing method thereof
RICHWAVE TECHNOLOGY CORP0 citations61
US7460851B2Dec 2, 2008
Method and apparatus for integrating a surface acoustic wave filter and a transceiver
RICHWAVE TECHNOLOGY CORP2 citations58
USRE46540ESep 5, 2017
Method and apparatus for integrating a surface acoustic wave filter and a transceiver
RICHWAVE TECHNOLOGY CORP0 citations48
US10923365B2Feb 16, 2021
Connection structure and method for forming the same
RICHWAVE TECHNOLOGY CORP0 citations47
TAIWAN SEMICONDUCTOR MFG
3 patentsUS7015086B2Mar 21, 2006
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
TAIWAN SEMICONDUCTOR MFG10 citations72
US7372102B2May 13, 2008
Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
TAIWAN SEMICONDUCTOR MFG3 citations61
US7250344B2Jul 31, 2007
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
TAIWAN SEMICONDUCTOR MFG0 citations50