Inventor
OWENS ALEXANDER H
US22 patents
⚠️ This page may combine multiple inventors who share the name “OWENS ALEXANDER H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
6 patentsUS5998280ADec 7, 1999
Modified recessed locos isolation process for deep sub-micron device processes
NAT SEMICONDUCTOR CORP57 citations96
US7795126B2Sep 14, 2010
Electrical die contact structure and fabrication method
NAT SEMICONDUCTOR CORP12 citations83
US6946706B1Sep 20, 2005
LDMOS transistor structure for improving hot carrier reliability
NAT SEMICONDUCTOR CORP19 citations82
US8765534B2Jul 1, 2014
Method for improved mobility using hybrid orientation technology (HOT) in conjunction with selective epitaxy and related apparatus
NAT SEMICONDUCTOR CORP5 citations73
US7340181B1Mar 4, 2008
Electrical die contact structure and fabrication method
NAT SEMICONDUCTOR CORP7 citations73
US6586302B1Jul 1, 2003
Method of using trenching techniques to make a transistor with a floating gate
NAT SEMICONDUCTOR CORP8 citations72
LSI LOGIC CORP
5 patentsUS5612552AMar 18, 1997
Multilevel gate array integrated circuit structure with perpendicular access to all active device regions
LSI LOGIC CORP119 citations98
US5621616AApr 15, 1997
High density CMOS integrated circuit with heat transfer structure for improved cooling
LSI LOGIC CORP37 citations92
US5516731AMay 14, 1996
High-temperature bias anneal of integrated circuits for improved radiation hardness and hot electron resistance
LSI LOGIC CORP21 citations90
US5661069AAug 26, 1997
Method of forming an MOS-type integrated circuit structure with a diode formed in the substrate under a polysilicon gate electrode to conserve space
LSI LOGIC CORP10 citations74
US5561319AOct 1, 1996
Integrated circuit structure including CMOS devices protected by patterned nitride passivation and method for the fabrication thereof
LSI LOGIC CORP12 citations71
SPRAGUE ELECTRIC CO
3 patentsUS4914051AApr 3, 1990
Method for making a vertical power DMOS transistor with small signal bipolar transistors
SPRAGUE ELECTRIC CO28 citations91
US4774202ASep 27, 1988
Memory device with interconnected polysilicon layers and method for making
SPRAGUE ELECTRIC CO24 citations79
US4706102ANov 10, 1987
Memory device with interconnected polysilicon layers and method for making
SPRAGUE ELECTRIC CO9 citations71
SOLID STATE SCIENT
3 patentsUS4646425AMar 3, 1987
Method for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layer
SOLID STATE SCIENT31 citations91
US4598460AJul 8, 1986
Method of making a CMOS EPROM with independently selectable thresholds
SOLID STATE SCIENT38 citations91
US4590665AMay 27, 1986
Method for double doping sources and drains in an EPROM
SOLID STATE SCIENT27 citations91
ALLEGRO MICROSYSTEMS INC
2 patentsUS5091321AFeb 25, 1992
Method for making an NPN transistor with controlled base width compatible with making a Bi-MOS integrated circuit
ALLEGRO MICROSYSTEMS INC18 citations73
US5045492ASep 3, 1991
Method of making integrated circuit with high current transistor and CMOS transistors
ALLEGRO MICROSYSTEMS INC11 citations73