Inventor

PFAFFENLEHNER MANFRED

DE23 patents

⚠️ This page may combine multiple inventors who share the name “PFAFFENLEHNER MANFRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PFAFFENLEHNER MANFRED

INFINEON TECHNOLOGIES AG

Semiconductor device and fabrication method suitable therefor

Power IGBT with increased robustness

Semiconductor device and fabrication method

Soft switching semiconductor component with high robustness and low switching losses

Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type

Vertical semiconductor device

Semiconductor component with edge termination region

Semiconductor component with edge termination region

Semiconductor component having a passivation layer and production method

Semiconductor element

Power semiconductor device and method of processing a power semiconductor device

Semiconductor diode and method of manufacturing a semiconductor diode

Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone

Semiconductor device including undulated profile of net doping in a drift zone

Power semiconductor device

INFINEON TECHNOLOGIES AUSTRIA

Method for manufacturing a semiconductor substrate including laser annealing

Semiconductor device and fabrication method

Semiconductor component and method

INFINEON TECHNOLOGIES AUSTRIA AG

High voltage termination structure of a power semiconductor device

Semiconductor component and integrated circuit

SCHULZE HANS-JOACHIM

Method of producing a semiconductor including two differently doped semiconductor zones

Robust semiconductor device with an emitter zone and a field stop zone

MAUDER ANTON

Semiconductor device and fabrication method