Inventor
HAN KYU-HEE
KR47 patents
⚠️ This page may combine multiple inventors who share the name “HAN KYU-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
37 patentsUS7303141B2Dec 4, 2007
Gas supplying apparatus
SAMSUNG ELECTRONICS CO LTD23 citations91
US10199263B2Feb 5, 2019
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations82
US10196738B2Feb 5, 2019
Deposition process monitoring system, and method of controlling deposition process and method of fabricating semiconductor device using the system
SAMSUNG ELECTRONICS CO LTD11 citations82
US11037872B2Jun 15, 2021
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11569128B2Jan 31, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10943824B2Mar 9, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations72
US10825766B2Nov 3, 2020
Semiconductor device with multi-layered wiring and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US10304734B2May 28, 2019
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10062609B2Aug 28, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9171781B2Oct 27, 2015
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US11139244B2Oct 5, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10669631B2Jun 2, 2020
Gas injection apparatus and thin film deposition equipment including the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US10566284B2Feb 18, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations71
US9312171B2Apr 12, 2016
Semiconductor devices having through-electrodes and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11107705B2Aug 31, 2021
Cleaning solution production systems and methods, and plasma reaction tanks
SAMSUNG ELECTRONICS CO LTD3 citations69
US10795262B2Oct 6, 2020
Method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations69
US11545372B2Jan 3, 2023
Plasma generator, cleaning liquid processing apparatus, semiconductor device cleaning apparatus, cleaning liquid processing method, and method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations67
US12243777B2Mar 4, 2025
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11823952B2Nov 21, 2023
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12218002B2Feb 4, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11881430B2Jan 23, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11776906B2Oct 3, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US11348827B2May 31, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10804145B2Oct 13, 2020
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations61
US11664242B2May 30, 2023
Cleaning solution production systems and methods, and plasma reaction tanks
SAMSUNG ELECTRONICS CO LTD0 citations58
US8569862B2Oct 29, 2013
Integrated circuit devices with crack-resistant fuse structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US10832948B2Nov 10, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10777449B2Sep 15, 2020
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US10658231B2May 19, 2020
Semiconductor device with air gap between wires and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9053948B2Jun 9, 2015
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations51
US11837618B1Dec 5, 2023
Image sensor including a protective layer
SAMSUNG ELECTRONICS CO LTD0 citations50
US12469788B2Nov 11, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10446495B2Oct 15, 2019
Methods of forming an ultra-low-k dielectric layer and dielectric layers formed thereby
SAMSUNG ELECTRONICS CO LTD0 citations47
US10901007B2Jan 26, 2021
RF sensing apparatus of plasma processing chamber and plasma processing chamber including same
SAMSUNG ELECTRONICS CO LTD0 citations46
US12490481B2Dec 2, 2025
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US9633836B2Apr 25, 2017
Methods of forming semiconductor devices including low-k dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations41
US10090381B2Oct 2, 2018
Semiconductor device including air-gap
SAMSUNG ELECTRONICS CO LTD0 citations40
HAN KYU-HEE
5 patentsUS8426308B2Apr 23, 2013
Method of forming through silicon via of semiconductor device using low-k dielectric material
HAN KYU-HEE16 citations90
US8786058B2Jul 22, 2014
Semiconductor devices and methods of manufacturing the same
HAN KYU-HEE8 citations82
US9337150B2May 10, 2016
Semiconductor devices including supporting patterns in gap regions between conductive patterns
HAN KYU-HEE4 citations72
US8455985B2Jun 4, 2013
Integrated circuit devices having selectively strengthened composite interlayer insulation layers and methods of fabricating the same
HAN KYU-HEE4 citations61
US9741608B2Aug 22, 2017
Methods of fabricating semiconductor devices including supporting patterns in gap regions between conductive patterns
HAN KYU-HEE0 citations51
AHN SANG-HOON
3 patentsUS9224593B2Dec 29, 2015
Method of manufacturing a semiconductor device having a porous, low-k dielectric layer
AHN SANG-HOON2 citations61
US8404579B2Mar 26, 2013
Methods of forming integrated circuit devices with crack-resistant fuse structures
AHN SANG-HOON0 citations51
US8524615B2Sep 3, 2013
Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer
AHN SANG-HOON0 citations40