Inventor
BRODSKY MARYJANE
US13 patents
⚠️ This page may combine multiple inventors who share the name “BRODSKY MARYJANE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
9 patentsUS7888723B2Feb 15, 2011
Deep trench capacitor in a SOI substrate having a laterally protruding buried strap
IBM17 citations92
US7759766B2Jul 20, 2010
Electrical fuse having a thin fuselink
IBM24 citations92
US7671394B2Mar 2, 2010
Embedded trench capacitor having a high-k node dielectric and a metallic inner electrode
IBM30 citations92
US7310585B2Dec 18, 2007
Method of inspecting integrated circuits during fabrication
IBM17 citations92
US8952460B2Feb 10, 2015
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
IBM7 citations84
US7875919B2Jan 25, 2011
Shallow trench capacitor compatible with high-K / metal gate
IBM18 citations84
US9059315B2Jun 16, 2015
Concurrently forming nFET and pFET gate dielectric layers
IBM2 citations63
US7397556B2Jul 8, 2008
Method, apparatus, and computer program product for optimizing inspection recipes using programmed defects
IBM2 citations61
US7454302B2Nov 18, 2008
Method of inspecting integrated circuits during fabrication
IBM0 citations51
BRODSKY MARYJANE
4 patentsUS9040399B2May 26, 2015
Threshold voltage adjustment for thin body MOSFETs
BRODSKY MARYJANE3 citations61
US9029959B2May 12, 2015
Composite high-k gate dielectric stack for reducing gate leakage
BRODSKY MARYJANE3 citations61
US8809152B2Aug 19, 2014
Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
BRODSKY MARYJANE2 citations61
US8198169B2Jun 12, 2012
Deep trench capacitor in a SOI substrate having a laterally protruding buried strap
BRODSKY MARYJANE2 citations61