Inventor
HSUEH CHIEN-LAN
US19 patents
⚠️ This page may combine multiple inventors who share the name “HSUEH CHIEN-LAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
15 patentsUS8835890B2Sep 16, 2014
ReRAM cells including TaXSiYN embedded resistors
INTERMOLECULAR INC11 citations91
US8913418B2Dec 16, 2014
Confined defect profiling within resistive random memory access cells
INTERMOLECULAR INC8 citations84
US9246099B1Jan 26, 2016
Low-temperature deposition of nitrides by UV-assisted ALD or CVD
INTERMOLECULAR INC9 citations83
US8883557B1Nov 11, 2014
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
INTERMOLECULAR INC14 citations83
US9029192B1May 12, 2015
Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells
INTERMOLECULAR INC4 citations73
US8853661B1Oct 7, 2014
Metal aluminum nitride embedded resistors for resistive random memory access cells
INTERMOLECULAR INC4 citations72
US8969129B2Mar 3, 2015
ReRAM cells including TaXSiYN embedded resistors
INTERMOLECULAR INC1 citations61
US9269567B2Feb 23, 2016
High productivity combinatorial processing using pressure-controlled one-way valves
INTERMOLECULAR INC2 citations60
US9276203B2Mar 1, 2016
Resistive switching layers including Hf-Al-O
INTERMOLECULAR INC1 citations52
US9269896B2Feb 23, 2016
Confined defect profiling within resistive random memory access cells
INTERMOLECULAR INC0 citations52
US9178152B2Nov 3, 2015
Metal organic chemical vapor deposition of embedded resistors for ReRAM cells
INTERMOLECULAR INC0 citations52
US9065040B2Jun 23, 2015
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
INTERMOLECULAR INC0 citations51
US9040413B2May 26, 2015
Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer
INTERMOLECULAR INC0 citations51
US9018068B2Apr 28, 2015
Nonvolatile resistive memory element with a silicon-based switching layer
INTERMOLECULAR INC0 citations51
US9006696B2Apr 14, 2015
Metal aluminum nitride embedded resistors for resistive random memory access cells
INTERMOLECULAR INC0 citations51