Inventor
HIGUCHI RANDALL J
US14 patents
Patents
14 patentsUS8835890B2Sep 16, 2014
ReRAM cells including TaXSiYN embedded resistors
INTERMOLECULAR INC11 citations91
US9018037B1Apr 28, 2015
Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices
INTERMOLECULAR INC14 citations84
US9246099B1Jan 26, 2016
Low-temperature deposition of nitrides by UV-assisted ALD or CVD
INTERMOLECULAR INC9 citations83
US8883557B1Nov 11, 2014
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
INTERMOLECULAR INC14 citations83
US9246096B2Jan 26, 2016
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC3 citations73
US8853661B1Oct 7, 2014
Metal aluminum nitride embedded resistors for resistive random memory access cells
INTERMOLECULAR INC4 citations72
US8969129B2Mar 3, 2015
ReRAM cells including TaXSiYN embedded resistors
INTERMOLECULAR INC1 citations61
US9276203B2Mar 1, 2016
Resistive switching layers including Hf-Al-O
INTERMOLECULAR INC1 citations52
US9006026B2Apr 14, 2015
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC0 citations52
US9065040B2Jun 23, 2015
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
INTERMOLECULAR INC0 citations51
US9040413B2May 26, 2015
Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer
INTERMOLECULAR INC0 citations51
US9018068B2Apr 28, 2015
Nonvolatile resistive memory element with a silicon-based switching layer
INTERMOLECULAR INC0 citations51
US9006696B2Apr 14, 2015
Metal aluminum nitride embedded resistors for resistive random memory access cells
INTERMOLECULAR INC0 citations51
US9425394B2Aug 23, 2016
Doped oxide dielectrics for resistive random access memory cells
INTERMOLECULAR INC0 citations40