Inventor
CHANG TING
US20 patents
Patents
20 patentsUS9929090B2Mar 27, 2018
Antifuse element using spacer breakdown
INTEL CORP7 citations84
US11094782B1Aug 17, 2021
Gate-all-around integrated circuit structures having depopulated channel structures
INTEL CORP8 citations83
US10312367B2Jun 4, 2019
Monolithic integration of high voltage transistors and low voltage non-planar transistors
INTEL CORP12 citations83
US12369358B2Jul 22, 2025
Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices
INTEL CORP2 citations73
US11437483B2Sep 6, 2022
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
INTEL CORP2 citations72
US10192969B2Jan 29, 2019
Transistor gate metal with laterally graduated work function
INTEL CORP4 citations71
US12249622B2Mar 11, 2025
Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications
INTEL CORP1 citations63
US10847456B2Nov 24, 2020
Antifuse element using spacer breakdown
INTEL CORP1 citations62
US12453145B2Oct 21, 2025
Single gated 3D nanowire inverter for high density thick gate SoC applications
INTEL CORP0 citations61
US12349411B2Jul 1, 2025
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
INTEL CORP0 citations61
US11862703B2Jan 2, 2024
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
INTEL CORP0 citations61
US11791380B2Oct 17, 2023
Single gated 3D nanowire inverter for high density thick gate SOC applications
INTEL CORP0 citations61
US11581404B2Feb 14, 2023
Gate-all-around integrated circuit structures having depopulated channel structures
INTEL CORP0 citations61
US12089411B2Sep 10, 2024
Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices
INTEL CORP0 citations56
US12568682B2Mar 3, 2026
Nanoribbon thick gate device with hybrid dielectric tuning for high breakdown and VT modulation
INTEL CORP0 citations51
US12040395B2Jul 16, 2024
High voltage extended-drain MOS (EDMOS) nanowire transistors
INTEL CORP0 citations51
US10164115B2Dec 25, 2018
Non-linear fin-based devices
INTEL CORP0 citations51
US11996403B2May 28, 2024
ESD diode solution for nanoribbon architectures
INTEL CORP0 citations50
US10763209B2Sep 1, 2020
MOS antifuse with void-accelerated breakdown
INTEL CORP0 citations50
US9799668B2Oct 24, 2017
Memory cell having isolated charge sites and method of fabricating same
INTEL CORP0 citations41