Inventor
HAO XIAOJIE
US14 patents
⚠️ This page may combine multiple inventors who share the name “HAO XIAOJIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AVALANCHE TECHNOLOGY INC
13 patentsUS9679625B2Jun 13, 2017
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
AVALANCHE TECHNOLOGY INC5 citations84
US9306154B2Apr 5, 2016
Magnetic random access memory with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC6 citations84
US9082951B2Jul 14, 2015
Magnetic random access memory with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC5 citations84
US10153017B2Dec 11, 2018
Method for sensing memory element coupled to selector device
AVALANCHE TECHNOLOGY INC6 citations73
US10008663B1Jun 26, 2018
Perpendicular magnetic fixed layer with high anisotropy
AVALANCHE TECHNOLOGY INC6 citations73
US9871191B2Jan 16, 2018
Magnetic random access memory with ultrathin reference layer
AVALANCHE TECHNOLOGY INC4 citations73
US9831421B2Nov 28, 2017
Magnetic memory element with composite fixed layer
AVALANCHE TECHNOLOGY INC4 citations73
US9502092B2Nov 22, 2016
Unipolar-switching perpendicular MRAM and method for using same
AVALANCHE TECHNOLOGY INC3 citations73
US10032979B2Jul 24, 2018
Magnetic memory element with iridium anti-ferromagnetic coupling layer
AVALANCHE TECHNOLOGY INC2 citations70
US10559624B2Feb 11, 2020
Selector device having asymmetric conductance for memory applications
AVALANCHE TECHNOLOGY INC1 citations62
USRE47975EMay 5, 2020
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
AVALANCHE TECHNOLOGY INC0 citations52
US9543506B2Jan 10, 2017
Magnetic random access memory with tri-layer reference layer
AVALANCHE TECHNOLOGY INC0 citations52
US10910555B2Feb 2, 2021
Magnetic memory element incorporating perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC0 citations46