Inventor
O'MEARA DAVID
US14 patents
⚠️ This page may combine multiple inventors who share the name “O'MEARA DAVID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
11 patentsUS11195723B1Dec 7, 2021
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD5 citations82
US11164781B2Nov 2, 2021
ALD (atomic layer deposition) liner for via profile control and related applications
TOKYO ELECTRON LTD2 citations72
US10770294B2Sep 8, 2020
Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistance
TOKYO ELECTRON LTD6 citations72
US11024535B2Jun 1, 2021
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD4 citations71
US10978307B2Apr 13, 2021
Deposition process
TOKYO ELECTRON LTD0 citations62
US11742241B2Aug 29, 2023
ALD (atomic layer deposition) liner for via profile control and related applications
TOKYO ELECTRON LTD0 citations61
US11651967B2May 16, 2023
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD0 citations61
US11621190B2Apr 4, 2023
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD0 citations61
US11823910B2Nov 21, 2023
Systems and methods for improving planarity using selective atomic layer etching (ALE)
TOKYO ELECTRON LTD0 citations51
US11621164B2Apr 4, 2023
Method for critical dimension (CD) trim of an organic pattern used for multi-patterning purposes
TOKYO ELECTRON LTD0 citations51
US10964587B2Mar 30, 2021
Atomic layer deposition for low-K trench protection during etch
TOKYO ELECTRON LTD0 citations50