Inventor
LESK ISRAEL A
32 patents
⚠️ This page may combine multiple inventors who share the name “LESK ISRAEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
28 patentsUS5927993AJul 27, 1999
Backside processing method
MOTOROLA INC63 citations96
US4481378ANov 6, 1984
Protected photovoltaic module
MOTOROLA INC143 citations96
US4131488ADec 26, 1978
Method of semiconductor solar energy device fabrication
MOTOROLA INC90 citations96
US5268326ADec 7, 1993
Method of making dielectric and conductive isolated island
MOTOROLA INC63 citations95
US5300187AApr 5, 1994
Method of removing contaminants
MOTOROLA INC66 citations93
US4137123AJan 30, 1979
Texture etching of silicon: method
MOTOROLA INC117 citations93
US5119171AJun 2, 1992
Semiconductor die having rounded or tapered edges and corners
MOTOROLA INC27 citations92
US4924291AMay 8, 1990
Flagless semiconductor package
MOTOROLA INC27 citations92
US4027053AMay 31, 1977
Method of producing polycrystalline silicon ribbon
MOTOROLA INC46 citations92
US4928162AMay 22, 1990
Die corner design having topological configurations
MOTOROLA INC35 citations91
US4227298AOct 14, 1980
Method for interconnecting photovoltaic devices
MOTOROLA INC30 citations91
US4547256AOct 15, 1985
Method for thermally treating a semiconductor substrate
MOTOROLA INC20 citations82
US4131755ADec 26, 1978
Interconnection for photovoltaic device array
MOTOROLA INC20 citations81
US5436498AJul 25, 1995
Gettering of impurities by forming a stable chemical compound
MOTOROLA INC8 citations74
US5430327AJul 4, 1995
Ohmic contact for III-V semiconductor materials
MOTOROLA INC9 citations73
US5369304ANov 29, 1994
Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor
MOTOROLA INC6 citations73
US5275971AJan 4, 1994
Method of forming an ohmic contact to III-V semiconductor materials
MOTOROLA INC14 citations73
US4916082AApr 10, 1990
Method of preventing dielectric degradation or rupture
MOTOROLA INC9 citations73
US4881115ANov 14, 1989
Bipolar semiconductor device having a conductive recombination layer
MOTOROLA INC9 citations73
US4837177AJun 6, 1989
Method of making bipolar semiconductor device having a conductive recombination layer
MOTOROLA INC7 citations73
US5434442AJul 18, 1995
Field plate avalanche diode
MOTOROLA INC14 citations72
US4832996AMay 23, 1989
Semiconductor die for plastic encapsulation having an adhesion promoter
MOTOROLA INC6 citations63
US4728391AMar 1, 1988
Pedestal transistors and method of production thereof
MOTOROLA INC5 citations63
US4905070AFeb 27, 1990
Semiconductor device exhibiting no degradation of low current gain
MOTOROLA INC3 citations60
US5567649AOct 22, 1996
Method of forming a conductive diffusion barrier
MOTOROLA INC5 citations58
US5556793ASep 17, 1996
Method of making a structure for top surface gettering of metallic impurities
MOTOROLA INC4 citations58
US5908321AJun 1, 1999
Semiconductor structure with stable pre-reacted particle and method for making
MOTOROLA INC1 citations52
US5389576AFeb 14, 1995
Method of processing a polycide structure
MOTOROLA INC0 citations52