P

Inventor

LESK ISRAEL A

32 patents
⚠️ This page may combine multiple inventors who share the name “LESK ISRAEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOTOROLA INC

28 patents
US5927993AJul 27, 1999

Backside processing method

MOTOROLA INC63 citations96
US4481378ANov 6, 1984

Protected photovoltaic module

MOTOROLA INC143 citations96
US4131488ADec 26, 1978

Method of semiconductor solar energy device fabrication

MOTOROLA INC90 citations96
US5268326ADec 7, 1993

Method of making dielectric and conductive isolated island

MOTOROLA INC63 citations95
US5300187AApr 5, 1994

Method of removing contaminants

MOTOROLA INC66 citations93
US4137123AJan 30, 1979

Texture etching of silicon: method

MOTOROLA INC117 citations93
US5119171AJun 2, 1992

Semiconductor die having rounded or tapered edges and corners

MOTOROLA INC27 citations92
US4924291AMay 8, 1990

Flagless semiconductor package

MOTOROLA INC27 citations92
US4027053AMay 31, 1977

Method of producing polycrystalline silicon ribbon

MOTOROLA INC46 citations92
US4928162AMay 22, 1990

Die corner design having topological configurations

MOTOROLA INC35 citations91
US4227298AOct 14, 1980

Method for interconnecting photovoltaic devices

MOTOROLA INC30 citations91
US4547256AOct 15, 1985

Method for thermally treating a semiconductor substrate

MOTOROLA INC20 citations82
US4131755ADec 26, 1978

Interconnection for photovoltaic device array

MOTOROLA INC20 citations81
US5436498AJul 25, 1995

Gettering of impurities by forming a stable chemical compound

MOTOROLA INC8 citations74
US5430327AJul 4, 1995

Ohmic contact for III-V semiconductor materials

MOTOROLA INC9 citations73
US5369304ANov 29, 1994

Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor

MOTOROLA INC6 citations73
US5275971AJan 4, 1994

Method of forming an ohmic contact to III-V semiconductor materials

MOTOROLA INC14 citations73
US4916082AApr 10, 1990

Method of preventing dielectric degradation or rupture

MOTOROLA INC9 citations73
US4881115ANov 14, 1989

Bipolar semiconductor device having a conductive recombination layer

MOTOROLA INC9 citations73
US4837177AJun 6, 1989

Method of making bipolar semiconductor device having a conductive recombination layer

MOTOROLA INC7 citations73
US5434442AJul 18, 1995

Field plate avalanche diode

MOTOROLA INC14 citations72
US4832996AMay 23, 1989

Semiconductor die for plastic encapsulation having an adhesion promoter

MOTOROLA INC6 citations63
US4728391AMar 1, 1988

Pedestal transistors and method of production thereof

MOTOROLA INC5 citations63
US4905070AFeb 27, 1990

Semiconductor device exhibiting no degradation of low current gain

MOTOROLA INC3 citations60
US5567649AOct 22, 1996

Method of forming a conductive diffusion barrier

MOTOROLA INC5 citations58
US5556793ASep 17, 1996

Method of making a structure for top surface gettering of metallic impurities

MOTOROLA INC4 citations58
US5908321AJun 1, 1999

Semiconductor structure with stable pre-reacted particle and method for making

MOTOROLA INC1 citations52
US5389576AFeb 14, 1995

Method of processing a polycide structure

MOTOROLA INC0 citations52

SOLAVOLT INT

2 patents

WEISS HARRY M

1 patent

LESK ISRAEL A

1 patent