Inventor
SAITO YOSHIHIKO
JP24 patents
⚠️ This page may combine multiple inventors who share the name “SAITO YOSHIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
10 patentsUS6750508B2Jun 15, 2004
Power semiconductor switching element provided with buried electrode
TOSHIBA KK190 citations99
US7224022B2May 29, 2007
Vertical type semiconductor device and method of manufacturing the same
TOSHIBA KK60 citations95
US4787997ANov 29, 1988
Etching solution for evaluating crystal faults
TOSHIBA KK26 citations92
US7531871B2May 12, 2009
Power semiconductor switching element
TOSHIBA KK8 citations84
US7067870B2Jun 27, 2006
Power semiconductor switching element
TOSHIBA KK12 citations84
US5138421AAug 11, 1992
Semiconductor substrate and method of producing the same, and semiconductor device
TOSHIBA KK21 citations82
US7982259B2Jul 19, 2011
Nonvolatile semiconductor memory
TOSHIBA KK6 citations74
US4894349AJan 16, 1990
Two step vapor-phase epitaxial growth process for control of autodoping
TOSHIBA KK18 citations74
US7651930B2Jan 26, 2010
Method of manufacturing semiconductor storage device
TOSHIBA KK2 citations63
US7863166B2Jan 4, 2011
Method of manufacturing semiconductor storage device
TOSHIBA KK0 citations52
ASAHI GLASS CO LTD
5 patentsUS4872958AOct 10, 1989
Ion exchange membrane for electrolysis
ASAHI GLASS CO LTD56 citations95
US5716504AFeb 10, 1998
Cation exchange membrane for electrolysis and process for producing potassium hydroxide of high purity
ASAHI GLASS CO LTD14 citations74
US4486277ADec 4, 1984
Electrolytic cation exchange membrane
ASAHI GLASS CO LTD6 citations63
US6984669B2Jan 10, 2006
Fluorinated cation exchange membrane and electrolytic soda process
ASAHI GLASS CO LTD4 citations62
US5149403ASep 22, 1992
Fluorine-containing cation exchange membrane for electrolysis and process for producing alkali metal hydroxide by using the same
ASAHI GLASS CO LTD6 citations62