Inventor
WELING MILIND
US29 patents
⚠️ This page may combine multiple inventors who share the name “WELING MILIND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VLSI TECHNOLOGY INC
12 patentsUS5420796AMay 30, 1995
Method of inspecting planarity of wafer surface after etchback step in integrated circuit fabrication
VLSI TECHNOLOGY INC141 citations98
US5757502AMay 26, 1998
Method and a system for film thickness sample assisted surface profilometry
VLSI TECHNOLOGY INC66 citations96
US5522957AJun 4, 1996
Method for leak detection in etching chambers
VLSI TECHNOLOGY INC28 citations93
US5399533AMar 21, 1995
Method improving integrated circuit planarization during etchback
VLSI TECHNOLOGY INC41 citations93
US5378318AJan 3, 1995
Planarization
VLSI TECHNOLOGY INC33 citations93
US6319796B1Nov 20, 2001
Manufacture of an integrated circuit isolation structure
VLSI TECHNOLOGY INC44 citations89
US6242805B1Jun 5, 2001
Method of using a polish stop film to control dishing during copper chemical mechanical polishing
VLSI TECHNOLOGY INC15 citations84
US6353261B1Mar 5, 2002
Method and apparatus for reducing interconnect resistance using an interconnect well
VLSI TECHNOLOGY INC11 citations74
US6114246ASep 5, 2000
Method of using a polish stop film to control dishing during copper chemical mechanical polishing
VLSI TECHNOLOGY INC15 citations74
US6022265AFeb 8, 2000
Complementary material conditioning system for a chemical mechanical polishing machine
VLSI TECHNOLOGY INC10 citations70
US6211087B1Apr 3, 2001
Chemical wet etch removal of underlayer material after performing chemical mechanical polishing on a primary layer
VLSI TECHNOLOGY INC6 citations62
US6410440B1Jun 25, 2002
Method and apparatus for a gaseous environment providing improved control of CMP process
VLSI TECHNOLOGY INC6 citations60
INTERMOLECULAR INC
6 patentsUS9246094B2Jan 26, 2016
Stacked bi-layer as the low power switchable RRAM
INTERMOLECULAR INC8 citations84
US9231203B1Jan 5, 2016
Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells
INTERMOLECULAR INC14 citations84
US9224951B1Dec 29, 2015
Current-limiting electrodes
INTERMOLECULAR INC11 citations84
US8981332B2Mar 17, 2015
Nonvolatile resistive memory element with an oxygen-gettering layer
INTERMOLECULAR INC10 citations84
US8912518B2Dec 16, 2014
Resistive random access memory cells having doped current limiting layers
INTERMOLECULAR INC4 citations73
US9331276B2May 3, 2016
Nonvolatile resistive memory element with an oxygen-gettering layer
INTERMOLECULAR INC2 citations63
KONINKL PHILIPS ELECTRONICS NV
3 patentsUS6545338B1Apr 8, 2003
Methods for implementing co-axial interconnect lines in a CMOS process for high speed RF and microwave applications
KONINKL PHILIPS ELECTRONICS NV63 citations95
US6572439B1Jun 3, 2003
Customized polishing pad for selective process performance during chemical mechanical polishing
KONINKL PHILIPS ELECTRONICS NV15 citations83
US7018282B1Mar 28, 2006
Customized polishing pad for selective process performance during chemical mechanical polishing
KONINKL PHILIPS ELECTRONICS NV3 citations62