Inventor
AOYAMA MASASHIGE
JP6 patents
Patents
6 patentsUS4908681AMar 13, 1990
Insulated gate field effect transistor with buried layer
SANYO ELECTRIC CO112 citations94
US6635925B1Oct 21, 2003
Semiconductor device and method of manufacturing the same
SANYO ELECTRIC CO24 citations91
US6784059B1Aug 31, 2004
Semiconductor device and method of manufacturing thereof
SANYO ELECTRIC CO11 citations72
US6683349B1Jan 27, 2004
Semiconductor device and method of manufacturing the same
SANYO ELECTRIC CO10 citations72
US5940708AAug 17, 1999
Method for production of semiconductor integrated circuit device
SANYO ELECTRIC CO9 citations71
US7224023B2May 29, 2007
Semiconductor device and method of manufacturing thereof
SANYO ELECTRIC CO0 citations51